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UNR1111(UN1111) PDF预览

UNR1111(UN1111)

更新时间: 2024-10-13 23:39:27
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
14页 260K
描述
Composite Device - Transistors with built-in Resistor

UNR1111(UN1111) 数据手册

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Transistors with built-in Resistor  
UNR1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/  
111D/111E/111F/111H/111L  
(UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/  
Unit: mm  
111D/111E/111F/111H/111L)  
Silicon PNP epitaxial planar transistor  
2.5±0.1  
6.9±0.1  
(1.0)  
(1.5)  
(1.5)  
R 0.9  
For digital circuits  
R 0.7  
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
(0.85)  
0.45±0.05  
0.55±0.1  
M type package allowing easy automatic and manual insertion as  
well as stand-alone fixing to the printed circuit board.  
3
2
1
1:Base  
2:Collector  
3:Emitter  
(2.5) (2.5)  
Resistance by Part Number  
(R1)  
10k  
22kΩ  
47kΩ  
10kΩ  
10kΩ  
4.7kΩ  
22kΩ  
0.51kΩ  
1kΩ  
47kΩ  
47kΩ  
47kΩ  
4.7kΩ  
2.2kΩ  
4.7kΩ  
(R2)  
10kΩ  
22kΩ  
47kΩ  
47kΩ  
M-A1 Package  
UNR1111  
UNR1112  
UNR1113  
UNR1114  
UNR1115  
UNR1116  
UNR1117  
UNR1118  
UNR1119  
UNR1110  
UNR111D  
UNR111E  
UNR111F  
UNR111H  
UNR111L  
Internal Connection  
C
E
R1  
B
5.1kΩ  
10kΩ  
10kΩ  
22kΩ  
10kΩ  
10kΩ  
4.7kΩ  
R2  
Absolute Maximum Ratings (Ta=25˚C)  
Parameter  
Symbol  
VCBO  
VCEO  
IC  
Ratings  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Collector current  
–50  
V
–100  
mA  
mW  
˚C  
Total power dissipation  
Junction temperature  
Storage temperature  
PT  
400  
Tj  
150  
Tstg  
–55 to +150  
˚C  
Note) The part numbers in the parenthesis show conventional part number.  
1

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