UMT18N

更新时间： 2024-11-06 05:52:47

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	110K
描述
General purpose transistors (dual transistors)

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中文翻译

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数据手册

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UMT18N 数据手册

EMT18 / UMT18N / IMT18

Transistors

General purpose transistors

(dual transistors)

EMT18 / UMT18N / IMT18

zDimensions (Unit : mm)

zFeatures

1) Two 2SA2018 chips in a EMT package.

2) Mounting possible with EMT3 or UMT3 or SMT3

automatic mounting machines.

EMT18

3) Transistor elements are independent, eliminating

interference.

Each lead has same dimensions

Abbreviated symbol : T18

ROHM : EMT6

UMT18N

zStructure

Epitaxial planar type

NPN silicon transistor

Each lead has same dimensions

The following characteristics apply to both Tr¹and Tr2.

ROHM : UMT6

EIAJ : SC-88

Abbreviated symbol : T18

zEquivalent circuit

IMT18

EMT18 / UMT18N

IMT18

(3) (2) (1)

(4) (5) (6)

Tr₁

Tr₂

Each lead has same dimensions

Abbreviated symbol : T18

ROHM : SMT6

EIAJ : SC-74

(4) (5) (6)

(3) (2) (1)

JEDEC : SOT-457

zAbsolute maximum ratings (Ta=25°C)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Limits

−15

−12

−6

−500

1.0

Unit

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

∗1

I_CP

EMT6

150 (TOTAL)^∗2

Power dissipation

P_CUMT6

SMT6

300 (TOTAL)^∗3

150

Junction temperature

Storage temperature

°C

Tstg

−55 to +150

∗1 Single pulse P =1ms

∗2 120mW per element must not be exceeded.

∗3 200mW per element must not be exceeded.

Rev.B

1/3

12 3 4

中文翻译

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