Datasheet > UMT18NTN

UMT18NTN

更新时间： 2024-11-08 23:39:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管光电二极管
页数	文件大小	规格书
3页	38K
描述
TRANSISTOR \| BJT \| PAIR \| PNP \| 12V V(BR)CEO \| 500MA I(C) \| SOT-363

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中文翻译

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数据手册

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UMT18NTN 数据手册

EMT18 / UMT18N

Transistors

General purpose transistors

(dual transistors)

EMT18 / UMT18N

zExternal dimensions (Units : mm)

zFeatures

1) Two 2SA2018 chips in a EMT or UMT package.

2) Mounting possible with EMT3 or UMT3 automatic

mounting machines.

EMT18

(

)

( )

)

1.2

1.6

3) Transistor elements are independent, eliminating

interference.

Each lead has same dimensions

ROHM : EMT6

UMT18N

Abbreviated symbol : T18

zStructure

Epitaxial planar type

NPN silicon transistor

1.25

2.1

The following characteristics apply to both Tr1 and Tr2.

0.1Min.

Each lead has same dimensions

zEquivalent circuit

ROHM : UMT6

EIAJ : SC-88

EMT18 / UMT18N

(3) (2) (1)

Abbreviated symbol : T18

Tr1

Tr2

(4) (5) (6)

zAbsolute maximum ratings (Ta=25°C)

Limits

−15

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Unit

VCBO

VCEO

VEBO

−12

−6

−500

˚C

150 (TOTAL)

Power dissipation

Junction temperature

Storage temperature

150

Tstg

−55 +150

1 120mW per element must not be exceeded.

12 3

中文翻译

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