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UMT18NTN PDF预览

UMT18NTN

更新时间: 2024-11-30 23:39:23
品牌 Logo 应用领域
其他 - ETC 晶体晶体管光电二极管
页数 文件大小 规格书
3页 38K
描述
TRANSISTOR | BJT | PAIR | PNP | 12V V(BR)CEO | 500MA I(C) | SOT-363

UMT18NTN 数据手册

 浏览型号UMT18NTN的Datasheet PDF文件第2页浏览型号UMT18NTN的Datasheet PDF文件第3页 
EMT18 / UMT18N  
Transistors  
General purpose transistors  
(dual transistors)  
EMT18 / UMT18N  
zExternal dimensions (Units : mm)  
zFeatures  
1) Two 2SA2018 chips in a EMT or UMT package.  
2) Mounting possible with EMT3 or UMT3 automatic  
mounting machines.  
EMT18  
(
3
(
2
(
1
)
( )  
4
( )  
5
( )  
6
)
)
1.2  
1.6  
3) Transistor elements are independent, eliminating  
interference.  
Each lead has same dimensions  
ROHM : EMT6  
UMT18N  
Abbreviated symbol : T18  
zStructure  
Epitaxial planar type  
NPN silicon transistor  
1.25  
2.1  
The following characteristics apply to both Tr1 and Tr2.  
0.1Min.  
Each lead has same dimensions  
zEquivalent circuit  
ROHM : UMT6  
EIAJ : SC-88  
EMT18 / UMT18N  
(3) (2) (1)  
Abbreviated symbol : T18  
Tr1  
Tr2  
(4) (5) (6)  
zAbsolute maximum ratings (Ta=25°C)  
Limits  
15  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Unit  
V
VCBO  
VCEO  
VEBO  
12  
V
6  
V
I
C
500  
mA  
mW  
˚C  
˚C  
1
P
C
150 (TOTAL)  
Power dissipation  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55 +150  
1 120mW per element must not be exceeded.  

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