是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.72 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 4.2 A | 最大漏源导通电阻: | 0.045 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 33 A | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UML2502L-AE3-R | UTC |
获取价格 |
N-CHANNEL POWER MOSFET | |
UML25F | ASI |
获取价格 |
NPN SILICON RF POWER TRANSISTOR | |
UML25S | ASI |
获取价格 |
NPN SILICON RF POWER TRANSISTOR | |
UML2N | ROHM |
获取价格 |
Low-frequency transistor (isolated transistor and diode) | |
UML2N | HTSEMI |
获取价格 |
Isolated transistor an d diodes | |
UML2N | MCC |
获取价格 |
ISOLATED TRANSISTOR AND DIODES | |
UML2N | CJ |
获取价格 |
SOT-353 | |
UML2NTL | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, | |
UML2N-TP | MCC |
获取价格 |
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C | |
UML2N-TP-HF | MCC |
获取价格 |
Small Signal Bipolar Transistor, 0.15A I(C), NPN, |