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UML2N PDF预览

UML2N

更新时间: 2024-11-26 08:24:11
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体二极管晶体管
页数 文件大小 规格书
2页 641K
描述
Isolated transistor an d diodes

UML2N 数据手册

 浏览型号UML2N的Datasheet PDF文件第2页 
UML2N  
Isolated transistor and diodes  
SOT-353  
Features  
z
The 2SC2412K and a diodes are housed independently  
In a package  
1
MARKINGL2  
TR MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
Parameter  
Value  
Units  
60  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCEO  
VEBO  
IC  
50  
6
V
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
150  
mA  
mW  
PC  
150  
TJ  
150  
Tstg  
Storage Temperature  
-55 to150  
DIO Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃  
Parameter  
Symbol  
Limits  
Unit  
VR  
VRM  
IFM  
80  
80  
V
V
DC reverse voltage  
Peak Reverse Voltage  
Forward Continuous Current  
Average Rectified Output Current  
Surge current  
300  
mA  
mA  
A
IO  
100  
ISURGE  
Tj  
4
Junction temperature  
Storage temperature  
150  
TSTG  
-55~+150  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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