Datasheet > UML6N

UML6N

更新时间： 2024-11-23 08:24:11

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体二极管晶体管
页数	文件大小	规格书
2页	542K
描述
General purpose transistors (Isolated transistor and diode)

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中文翻译

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数据手册

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UML6N 数据手册

UML6N

General purpose transistors(Isolated transistor and diode)

FEATURES

2SC5585 and RB521S-30 chips in a package

SOT-353

APPLICATIONS

DC / DC converter

Motor driver

FEATURES

1) Tr : Low VCE(sat)

Di : Low VF

2) Small package

STRUCTURE

Silicon epitaxial planar transistor

Schottky barrier diode

Marking: L6

Equivalent circuit

Absolute maximum ratings (Ta=25℃)

Parameter

Symbol

V_R

Limits

Unit

DC reverse voltage

Mean rectifying current

Peak forward surge current

Junction temperature

Storage temperature

I_O

200

I_FSM

125

℃

T_stg

-55~+150

℃

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Limits

Unit

Collector Current -Continuous

Collector Dissipation

500

℃

P_C

150

T_j

Junction temperature

Storage Temperature

150

T_stg

-55~+150

℃

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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