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UMH8N PDF预览

UMH8N

更新时间: 2024-02-27 19:31:01
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管数字晶体管
页数 文件大小 规格书
3页 80K
描述
General purpose (dual digital transistors)

UMH8N 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.73
其他特性:DIGITAL, BUILT IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UMH8N 数据手册

 浏览型号UMH8N的Datasheet PDF文件第2页浏览型号UMH8N的Datasheet PDF文件第3页 
UMH8N / IMH8A  
Transistors  
General purpose (dual digital transistors)  
UMH8N / IMH8A  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Two DTC114T chips in a EMT or UMT or SMT  
package.  
UMH8N  
1.25  
2.1  
zEquivalent circuits  
UMH8N  
IMH8A  
(3)  
(2)  
(1)  
(4)  
(5)  
(6)  
0.1Min.  
R1  
R1  
ROHM : UMT6  
EIAJ : SC-88  
Each lead has same dimensions  
R1  
R1  
(4) (5)  
(6)  
(3) (2)  
(1)  
R1=10kΩ  
R1=10kΩ  
IMH8A  
zPackage, marking, and packaging specifications  
UMH8N  
UMT6  
H8  
IMH8A  
SMT6  
H8  
1.6  
2.8  
Type  
Package  
Marking  
Code  
TR  
T108  
3000  
0.3Min.  
Basic ordering unit (pieces)  
3000  
ROHM : SMT6  
EIAJ : SC-74  
Each lead has same dimensions  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
CBO  
CEO  
EBO  
50  
50  
V
5
V
I
C
100  
mA  
1  
2  
UMH8N  
IMH8A  
150(TOTAL)  
300(TOTAL)  
150  
Pd  
mW  
Power dissipation  
Junction temperature  
Storage temperature  
Tj  
°C  
°C  
Tstg  
55 to +150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
zElectrical characteristics (Ta=25°C)  
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
Symbol  
Min.  
Typ.  
Max.  
Conditions  
Unit  
BVCBO  
BVCEO  
BVEBO  
50  
50  
5
V
V
I
I
I
C
=50µA  
=1mA  
C
V
E
=50µA  
CB=50V  
EB=4V  
I
CBO  
EBO  
CE(sat)  
FE  
0.5  
0.5  
0.3  
600  
µA  
µA  
V
V
V
Emitter cutoff current  
I
Collector-emitter saturation voltage  
DC current transfer ratio  
V
100  
I
C
/I  
CE=5V, I  
CE=10V, I  
B
=10mA/1mA  
h
250  
250  
10  
MHz  
V
V
C
=1mA  
= −5mA, f=100MHz  
Transition frequency  
f
T
E
Input resistance  
R1  
7
13  
kΩ  
Transition frequency of the device.  
Rev.A  
1/2  

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