Datasheet > UMH9N

UMH9N

更新时间： 2024-09-24 08:24:11

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	397K
描述
NPN Multi-Chip Built-in Resistors Transistor

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中文翻译

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技术参数
数据手册

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UMH9N 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.58	Is Samacsys：	N
Base Number Matches：	1

UMH9N 数据手册

UMH9N

NPN Multi-Chip

Elektronische Bauelemente

Built-in Resistors Transistor

RoHS Compliant Product

SOT-363

8^o

.055(1.40)

.047(1.20)

.026TYP

(0.65TYP)

.021REF

(0.525)REF

* Features

.053(1.35)

.045(1.15)

.096(2.45)

.085(2.15)

* Mounting possible with 3automatic mounting

machines.

* Transistor elements are independent,

eliminating interference.

.018(0.46)

.010(0.26)

.014(0.35)

.006(0.15)

.003(0.08)

* Mounting cost and area can be cut in half.

.087(2.20)

.079(2.00)

.004(0.10)

.000(0.00)

(3)

(2)

(1)

.043(1.10)

.035(0.90)

.039(1.00)

.035(0.90)

Dimensions in inches and (millimeters)

(4)

(5)

(6) R1=10K R2=47K

MARKING：H9

Absolute maximum ratings(Ta=25℃)

Parameter

Symbol

Unit

Limits

Supply voltage

Input voltage

V_CC

V_IN

-6~40

I_O

Output current

I_C(MAX)

100

Power dissipation

Junction temperature

Storage temperature

150(TOTAL)

150

℃

Tstg

-55~150

℃

Electrical characteristics (Ta=25℃)

Parameter

Symbol

V_I(off)

V_I(on)

V_O(on)

I_I

Min.

Typ

Max.

Unit

Conditions

V_CC=5V ,I_O=100μA

V_O=0.3V ,I_O=1 mA

I_O/I_I=5mA/0.25mA

V_I=5V

0.3

Input voltage

1.4

Output voltage

Input current

0.3

0.88

0.5

µA

Output current

I_O(off)

G_I

V_CC=50V, V_I=0

V_O=5V ,I_O=5mA

DC current gain

Input resistance

Resistance ratio

Transition frequency

R₁

4.7

250

KΩ

R₂/R₁

f_T

3.7

5.7

MHz

V_CE=10V ,I_E=-5mA,f=100MHz

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jan-2006 Rev. B

Page 1 of 2

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