Datasheet > UMH9N

UMH9N

更新时间： 2024-09-25 14:55:27

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1127K
描述
SOT-363

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中文翻译

获取价格

技术参数
数据手册

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UMH9N 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.55
Is Samacsys：	N	Base Number Matches：	1

UMH9N 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

Digital Transistors (Built-in Resistors)

Dual Digital Transistors (NPN+NPN)

UMH9N

SOT-363

FEATURES

Two DTC114Y chips in a package

Transistor elements are independent, eliminating interference

Mounting cost and area can be cut in half

R₁

R₂

R₁

MARKING：H9

Absolute maximum ratings(Ta=25℃)

Parameter

Symbol

Unit

Value

Supply voltage

Input voltage

V_CC

V_IN

-6~40

I_O

Output current

℃

I_C(MAX)

100

Power dissipation

150(TOTAL)

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~+150

Electrical characteristics (Ta=25℃)

Parameter

Symbol

V_I(off)

V_I(on)

V_O(on)

I_I

Min.

Typ

Max.

Unit

Conditions

0.3

V_CC=5V ,I_O=100µA

V_O=0.3V ,I_O=1 mA

I_O/I_I=5mA/0.25mA

V_I=5V

Input voltage

1.4

Output voltage

Input current

0.3

0.88

0.5

μA

Output current

I_O(off)

G_I

V_CC=50V, V_I=0

V_O=5V ,I_O=5mA

DC current gain

Input resistance

Resistance ratio

Transition frequency

R₁

KΩ

R₂/R₁

f_T

3.7

4.7

5.7

250

MHz

V_CE=10V ,I_E=-5mA,f=100MHz

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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