Datasheet > UMA64AE3

UMA64AE3

更新时间： 2024-12-01 19:25:07

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网光电二极管
页数	文件大小	规格书
4页	434K
描述
Trans Voltage Suppressor Diode, 500W, 64V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, ULTRAMITE, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

UMA64AE3 技术参数

生命周期：	Obsolete	包装说明：	R-PDSO-R2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.84
最小击穿电压：	71.1 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	R-PDSO-R2	最大非重复峰值反向功率耗散：	500 W
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性：	UNIDIRECTIONAL
最大功率耗散：	1.08 W	最大重复峰值反向电压：	64 V
表面贴装：	YES	技术：	AVALANCHE
端子形式：	WRAP AROUND	端子位置：	DUAL
Base Number Matches：	1

UMA64AE3 数据手册

UMA5.0A thru UMA170CA

ULTRAMITE™ SURFACE MOUNT 500 Watt

Transient Voltage Suppressor 5.0 to 170 V

S C O T T S D A L E D I V I S I O N

DESCRIPTION

PACKAGE

These 500 watt transient voltage suppressors offer capabilities only found in larger

packages. They are used for protecting against a variety of transients from inductive

switching environments or lower levels of induced secondary lightning effects of

IEC61000-4-5. It offers the same size footprint as the popular DO-214AC or

BA package outlines except with a much lower profile height. Its robust

configuration in a “2010” style MELF package prevents damage to extended-

lead terminals and virtually eliminates inductive parasitics from fast rise-time

transients with very short internal/external conduction paths. They are also very

effective in protection from ESD or EFT per IEC61000-4-2 and IEC61000-4-4.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

UltraMite™

FEATURES

APPLICATIONS / BENEFITS

•

Available as a unidirectional or bidirectional device

•

Protects sensitive components such as IC’s, CMOS,

Bipolar, BiCMOS, ECL, DTL, T²L, etc.

(bidirectional with CA suffix)

•

Fast response time

•

Protection from switching transients & induced RF

Suppresses transients up to 500 W @ 10/1000 µs

Compliant to IEC61000-4-2 and IEC61000-4-4 for

(see Figure 1, 2, and 3).

ESD and EFT protection respectively

•

Robust 2010 MELF style flat package configuration

for accurate pick-and-place handling

•

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

Fits same small narrow PCB pad layouts as “SMAJ”

Class 1: UMA5.0 to UMA100A or CA

Class 2: UMA5.0 to UMA51A or CA

Class 3: UMA5.0 to UMA24A or CA

Class 4: UMA5.0 to UMA12A or CA

packages in JEDEC DO-214AC (or BA)

•

Very low height profile (approximately 1 mm)

Available on Tape and Reel

Built-in stress relief with similar COE as PC boards

Optional Lead-Free design/finish (UMAF5.0A-170CA)

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers.

ꢀ

Secondary lightning protection per IEC61000-4-5

with 12 Ohms source impedance:

Class 1: UMA5.0 to UMA30A or CA

Class 2: UMA5.0 to UMA16A or CA

•

Virtually zero inductive parasitics with minimal Ldi/dt

voltage overshoots for fast-rise-time transients

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Peak Pulse Power dissipation at 25^ºC: 500 watts at

•

FRP substrate material and epoxy under-fill package

10/1000 µs (also see Fig 1, 2, and 3)

Impulse repetition rate (duty factor): 0.01%

meeting UL94V-0

•

Terminals solder plated (solderable per MIL-STD-

750, Method 2026)

_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

Body marked with part number without UMA prefix

(ie. 05, 15A, 33A, 58, 150CA, etc.)

•

Operating and Storage temperature: -55^ºC to +150^ºC

Thermal resistance: 50 ^ºC/W junction to lead, or

115^ºC/W junction to ambient when mounted on FR4

PC board (1oz Cu) with recommended 5 mm²pads

(see last page)

Cathode designated with band (no band on

bidirectional)

Weight: 0.020 grams (approximate)

Tape & Reel packaging per EIA-481-2 with 12 mm

tape and 3000 units/reel (7 inch) or 10,000 units/reel

(13 inch)

•

Steady-State Power: 2.5 watts at T_L= 25^oC, or 1.08

watts at T_A= 25^ºC when mounted on FR4 PC board

with recommended 5 mm²footprint pads

•

See package dimensions on last page

Forward Surge Current at 25ºC: 40 amps peak, 8.3

ms half-sine wave. Maximum voltage of 3.50 V

(unidirectional only)

Solder temperatures: 260 ^ºC for 10 s (maximum)

Microsemi

Page 1

MSCUMA5.0.PDF 10-16-2003 REV B

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与UMA64AE3相关器件

型号	品牌	获取价格	描述	数据表
UMA64CA	MICROSEMI	获取价格	ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V
UMA6N	ROHM	获取价格	Emitter common (dual digital transistors)
UMA6NT1	ONSEMI	获取价格	Dual Common Emitter Bias Resistor Transistors
UMA6NT1G	ONSEMI	获取价格	Dual Common Emitter Bias Resistor Transistors
UMA6NT2	ONSEMI	获取价格	UMA6NT2
UMA6NT2G	ONSEMI	获取价格	UMA6NT2G
UMA6NTL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
UMA6NTR	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, UMT5, S
UMA6TL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MINIMOL
UMA6TR	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MINIMOL

与UMA64AE3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

UMA64AE3

UMA64AE3 技术参数

UMA64AE3 数据手册

与UMA64AE3相关器件

与UMA64AE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UMA64AE3

UMA64AE3 技术参数

UMA64AE3 数据手册

与UMA64AE3相关器件

与UMA64AE3相关文章

您还可以找

您在本页遇到什么问题？