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UMA6NT1G PDF预览

UMA6NT1G

更新时间: 2024-01-16 15:47:10
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 60K
描述
Dual Common Emitter Bias Resistor Transistors

UMA6NT1G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-70包装说明:LEAD FREE, CASE 419A-02, SC-88A, SC-70, 5 PIN
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.52
其他特性:BUILT IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):160JESD-30 代码:R-PDSO-G5
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:5
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
Base Number Matches:1

UMA6NT1G 数据手册

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UMA4NT1, UMA6NT1  
Preferred Devices  
Dual Common Emitter Bias  
Resistor Transistors  
PNP Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the UMC2NT1 series, two  
BRT devices are housed in the SOT−353 package which is ideal for  
low power surface mount applications where board space is at a  
premium.  
3
2
1
R1  
R1  
Q1  
Q2  
4
5
Features  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
Pb−Free Packages are Available  
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q  
Ux M G  
A
1
and Q , − minus sign for Q (PNP) omitted)  
G
2
1
SC−88A/SOT−353  
CASE 419A  
STYLE 7  
Rating  
Symbol  
Value  
50  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
CBO  
CEO  
V
50  
Vdc  
I
C
100  
mAdc  
Ux = Device Code  
x = 0 or 1  
THERMAL CHARACTERISTICS  
M
= Date Code  
Thermal Resistance, Junction-to-Ambient  
(Surface Mounted)  
R
833  
°C/W  
q
JA  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Operating and Storage Temperature Range T , T  
−65 to +150  
*150  
°C  
J
stg  
Total Package Dissipation @ T = 25°C  
P
D
mW  
A
ORDERING INFORMATION  
(Note 1)  
Device  
UMA4NT1  
UMA4NT1G  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Device mounted on a FR-4 glass epoxy printed circuit board using the  
minimum recommended footprint.  
SOT−353  
3000/Tape & Reel  
3000/Tape & Reel  
SOT−353  
(Pb−Free)  
UMA6NT1  
SOT−353  
3000/Tape & Reel  
3000/Tape & Reel  
DEVICE RESISTOR VALUES  
UMA6NT1G  
SOT−353  
(Pb−Free)  
Device  
R1 (K)  
R2 (K)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
UMA4NT1  
UMA6NT1  
10  
47  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 4  
UMA4NT1/D  
 

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