UGF12JD
Taiwan Semiconductor
CREAT BY ART
12A, 600V Isolated Ultrafast Rectifier
FEATURES
- Especially suited as boost diode
on continuous mode power factor correctors
- Ideal Solution for hard switching condition
- High capability for high di/dt operation.
Downsizing of mosfet and heatsink.
- High surge current capability
1
2
- High operation temperature to TJ 175°C
ITO-220AC
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
- AEC-Q101 qualified (Green compound not involved)
DESCRIPTION
Especially suited as free wheeling or boost diode in continuous mode
power factor correctors and other power switching applications.
The low stored charge and ultrafast soft recovery minimizes ringing and
electrical noise in power switching circuits. The family drastically cuts losses
in the associated MOSFET when run at high dIF/dt.
MECHANICAL DATA
Case: ITO-220AC
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
UGF12JD
SYMBOL
VRRM
UNIT
600
V
V
V
A
VRMS
420
Maximum DC blocking voltage
VDC
600
Maximum average forward rectified current
IF(AV)
12
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
VF
IR
100
A
V
TYP
3.1
MAX
-
Maximum instantaneous forward voltage (Note 1)
IF=12A
TJ=25°C
Maximum reverse current @ rated VR
TJ=125°C
0.5
μA
100
Reverse recovery time
TYP
13
MAX
25
IF=0.5A, IR=1A, IRR=0.25A, TJ=25°C
IF=1A, dIF/dt=-50A/μs, VR=30V, TJ=25°C
Reverse recovery charges
trr
ns
-
45
TYP
90
MAX
-
Qrr
IRM
nC
A
IF=12A, dIF/dt=-200A/µs, VR=400V, TJ=125°C
3.8
4.6
Typical thermal resistance
RθJC
TJ
2.4
°C/W
°C
Operating junction temperature range
Storage temperature range
- 55 to +175
- 55 to +175
TSTG
°C
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Document Number: DS_D0000081
Version: A15