Datasheet > UGF12JT-E3

UGF12JT-E3

更新时间： 2024-11-25 05:40:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	171K
描述
DIODE 12 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC, LEAD FREE, PLASTC, ITO-220AC, 2 PIN, Rectifier Diode

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数据手册

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UGF12JT-E3 数据手册

UG12HT, UGF12HT, UG12JT, UGF12JT

VISHAY

Vishay Semiconductors

Ultrafast Rectifiers

ITO-220AC

TO-220AC

Major Ratings and Characteristics

I_F(AV

V_RRM

t_rr

)

12 A

500, 600 V

30 ns

t_fr

500 ns

1.5 V

V_F

Features

UG12XT

UGF12XT

• Glass passivated chip junction

PIN 1

PIN 2

PIN 1

• Soft recovery characteristics

CASE

PIN 2

• High efficiency, low switching losses

• Meets MSL level 1, per J-STD-020C

Mechanical Data

Case: JEDEC TO-220AC, ITO-220AC

Terminals: Matte tin plated (E3 Suffix) leads, solder-

Typical Applications

For use in high voltage and high frequency power fac- able per J-STD-002B and MIL-STD-750, Method

tor correction application

2026

Mounting Torque: 10 in-lbs Maximum

Epoxy meets UL-94V-0 Flammability rating

Maximum Ratings

(T_C= 25 °C unless otherwise noted)

Parameter

Test condition

Symbol

V_RRM

UG12HT

500

UG12JT

600

Unit

Maximum repetitive peak

reverse voltage

Maximum working reverse

voltage

V_RWM

400

480

Maximum RMS voltage

V_RMS

V_DC

350

500

420

600

Maximum DC blocking voltage

Maximum average forward

rectified current

I_F(AV)

Peak forward surge current

8.3 ms single half sine-wave

superimposed on rated load

(JEDEC Method)

I_FSM

135

°C

Operating junction and storage

temperature range

T_J, T_STG

V_ISOL

-55 to +150

4500⁽¹⁾

3500⁽²⁾

1500⁽³⁾

RMS Isolation voltage (UGF

types only) from terminals to

heatsink

with t = 1.0 second, RH ≤ 30 %

Document Number 88758

02-Nov-04

www.vishay.com

12 3 4 5

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