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UGF10GCTHE3/45 PDF预览

UGF10GCTHE3/45

更新时间: 2024-11-06 15:55:59
品牌 Logo 应用领域
威世 - VISHAY 局域网功效二极管
页数 文件大小 规格书
5页 139K
描述
DIODE 5 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode

UGF10GCTHE3/45 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.45
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:EFFICIENCY外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.05 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:60 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

UGF10GCTHE3/45 数据手册

 浏览型号UGF10GCTHE3/45的Datasheet PDF文件第2页浏览型号UGF10GCTHE3/45的Datasheet PDF文件第3页浏览型号UGF10GCTHE3/45的Datasheet PDF文件第4页浏览型号UGF10GCTHE3/45的Datasheet PDF文件第5页 
BYT28-x00, BYT28F-x00, BYT28B-x00, UG10xCT, UGF10xCT, UGB10xCT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Ultrafast Soft Recovery Rectifier  
FEATURES  
ITO-220AB  
TO-220AB  
• Power pack  
• Glass passivated chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
3
3
2
2
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for TO-263AB package)  
1
BYT28, UG10 Series  
BYT28F, UGF10 Series  
PIN 1  
PIN 2  
PIN 1  
PIN 2  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
(for TO-220AB and ITO-220AB package)  
CASE  
PIN 3  
PIN 3  
TO-263AB  
K
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
2
TYPICAL APPLICATIONS  
1
For use in high frequency rectifier of switching mode  
power supplies, inverters, freewheeling diodes, DC/DC  
converters, and other power switching application.  
BYT28B, UGB10 Series  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: TO-220AB, ITO-220AB, TO-263AB  
IF(AV)  
2 x 5.0 A  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commerical grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
VRRM  
IFSM  
300 V to 400 V  
60 A  
trr  
35 ns  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
VF at IF  
TJ max.  
1.05 V  
150 °C  
meets JESD 201 class 2 whisker test  
TO-220AB, ITO-220AB,  
TO-263AB  
Package  
Polarity: As marked  
Diode variations  
Dual Common Cathode  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
BYT28-300  
UG10FCT  
BYT28-400  
UG10GCT  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum working reverse voltage  
Maximum RMS voltage  
VRRM  
VRWM  
VRMS  
VDC  
300  
300  
210  
300  
400  
400  
280  
400  
V
V
V
V
Maximum DC blocking voltage  
total device  
Maximum average forward rectified current at TC = 100 °C  
per diode  
10  
IF(AV)  
IFSM  
A
A
5.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
60  
Operating junction and storage temperature range  
TJ, TSTG  
VAC  
-40 to +150  
1500  
°C  
V
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min  
Revision: 05-Nov-13  
Document Number: 88552  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

UGF10GCTHE3/45 替代型号

型号 品牌 替代类型 描述 数据表
UGF10GCT-E3/45 VISHAY

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DIODE 5 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB,

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