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UGB8GT-E3/81 PDF预览

UGB8GT-E3/81

更新时间: 2024-11-20 15:55:59
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
5页 141K
描述
DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

UGB8GT-E3/81 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:D2PAK
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.31
其他特性:FREE WHEELING DIODE应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.03 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:110 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

UGB8GT-E3/81 数据手册

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BYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT  
www.vishay.com  
Vishay General Semiconductor  
Ultrafast Rectifier  
FEATURES  
TO-220AC  
ITO-220AC  
• Power pack  
• Glass passivated pellet chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• Low forward voltage drop  
2
2
• High forward surge capability  
1
1
BYV29, UG8 Series  
PIN 1  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C (for TO-263AB package)  
BYV29F, UGF8 Series  
PIN 1  
CASE  
PIN 2  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
(for TO-220AC and ITO-220AC package)  
PIN 2  
TO-263AB  
• AEC-Q101 qualified  
K
(for ITO-220AC and TO-263AB package)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
2
1
BYV29B, UGB8 Series  
TYPICAL APPLICATIONS  
PIN 1  
K
For use in high frequency rectifier of switching mode  
power supplies, inverters, freewheeling diodes, DC/DC  
converters, and other power switching application.  
PIN 2  
HEATSINK  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
8.0 A  
Case: TO-220AC, ITO-220AC, TO-263AB  
Molding compound meets UL 94 V-0 flammability rating  
VRRM  
IFSM  
trr  
300 V to 400 V  
110 A  
Base P/N-E3  
-
RoHS-compliant, commerical grade  
35 ns  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
VF  
1.03 V  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
TJ max.  
150 °C  
TO-220AC, ITO-220AC,  
TO-263AB  
Package  
meets JESD 201 class 2 whisker test  
Polarity: as marked  
Diode variations  
Single  
Mounting Torque: 10 in-lbs max.  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
BYV29-300  
UG8FT  
300  
BYV29-400  
UG8GT  
400  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum working reverse voltage  
Maximum RMS voltage  
VRRM  
VRWM  
VRMS  
VDC  
V
V
V
V
A
300  
210  
300  
400  
280  
400  
Maximum DC blocking voltage  
Maximum average forward rectified current at TC = 100 °C  
IF(AV)  
8.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
110  
A
Operating junction and storage temperature range  
TJ, TSTG  
VAC  
-40 to +150  
1500  
°C  
V
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min  
Revision: 16-Nov-17  
Document Number: 88557  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

UGB8GT-E3/81 替代型号

型号 品牌 替代类型 描述 数据表
UGB8GTHE3/45 VISHAY

完全替代

DIODE GEN PURP 400V 8A TO263AB
UGB8GTHE3/81 VISHAY

完全替代

DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R

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