Datasheet > UGB8GT-HE3/45

UGB8GT-HE3/45

更新时间： 2024-11-20 19:45:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	122K
描述
DIODE 8 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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UGB8GT-HE3/45 技术参数

生命周期：	Active	零件包装代码：	D2PAK
包装说明：	ROHS COMPLIANT, PLASTIC PACKAGE-3	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

UGB8GT-HE3/45 数据手册

UG(F,B)8FT & UG(F,B)8GT, BYV29(F,B)-300 & BYV29(F,B)-400

Vishay General Semiconductor

Ultrafast Rectifier

FEATURES

TO-220AC

ITO-220AC

• Glass passivated chip junction

• Ultrafast recovery time

• Low switching losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

BYV29, UG8 Series

PIN 1

BYV29F, UGF8 Series

PIN 1

• Solder dip 260 °C, 40 s (for TO-220AC and

ITO-220AC package)

CASE

PIN 2

TO-263AB

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode

power supplies, inverters, freewheeling diodes,

dc-to-dc converters, and other power switching

application.

BYV29B, UGB8 Series

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: TO-220AC, ITO-220AC, TO-263AB

Epoxy meets UL 94V-0 flammability rating

I_F(AV)

8.0 A

V_RRM

I_FSM

t_rr

300 V, 400 V

110 A

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

35 ns

V_F

1.03 V

T_Jmax.

150 °C

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

BYV29-300

UG8FT

BYV29-400

UG8GT

PARAMETER

SYMBOL

UNIT

Maximum repetitive peak reverse voltage

Maximum working reverse voltage

Maximum RMS voltage

V_RRM

V_RWM

V_RMS

V_DC

300

210

300

400

280

400

Maximum DC blocking voltage

Maximum average forward rectified current at T_C= 100 °C

I_F(AV)

8.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

T_J, T_STG

V_AC

110

°C

Operating junction and storage temperature range

- 40 to + 150

1500

Isolation voltage (ITO-220AC only)

from terminal to heatsink t = 1 min

Document Number: 88557

Revision: 07-Nov-07

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

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与UGB8GT-HE3/45相关器件

型号	品牌	获取价格	描述	数据表
UGB8GTHE3/81	VISHAY	获取价格	DIODE 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
UGB8GT-HE3/81	VISHAY	获取价格	DIODE 8 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
UGB8HCT	VISHAY	获取价格	Dual Common-Cathode Ultrafast Plastic Rectifier
UGB8HCT/31	VISHAY	获取价格	Rectifier Diode, 8A, 500V V(RRM)
UGB8HCT/81	VISHAY	获取价格	Rectifier Diode, 8A, 500V V(RRM)
UGB8HCT-31	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 8A, 500V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3
UGB8HCT-45	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 8A, 500V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3
UGB8HCT-81	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 8A, 500V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-3
UGB8HCT-HE3/45	VISHAY	获取价格	DIODE 8 A, 500 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
UGB8HCT-HE3/81	VISHAY	获取价格	DIODE 8 A, 500 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R

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