Datasheet > UGB8HCT-HE3/81

UGB8HCT-HE3/81

更新时间： 2024-11-24 14:45:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	145K
描述
DIODE 8 A, 500 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

UGB8HCT-HE3/81 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	D2PAK
包装说明：	ROHS COMPLIANT, PLASTIC PACKAGE-3	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

UGB8HCT-HE3/81 数据手册

New Product

UG(F,B)8HCT & UG(F,B)8JCT

Vishay General Semiconductor

Dual Common-Cathode Ultrafast Plastic Rectifier

FEATURES

TO-220AB

ITO-220AB

• Glass passivated chip junction

• Ultrafast recovery time

• Soft recovery characteristics

• Low switching losses, high efficiency

• High forward surge capability

UG8xCT Series

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

UGF8xCT Series

PIN 1

PIN 2

PIN 1

PIN 2

CASE

PIN 3

• Solder dip 260 °C, 40 s (for TO-220AB and

ITO-220AB package)

TO-263AB

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

UGB8xCT Series

For use in high voltage and high frequency power

factor corrector, freewheeling diodes and secondary

dc-to-dc rectification application.

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

PRIMARY CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

t_rr

4 A x 2

500 V, 600 V

65 A

25 ns

V_F

1.50 V

T_Jmax.

150 °C

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

V_RWM

V_RMS

V_DC

UG8HCT

500

UG8JCT

600

UNIT

Maximum repetitive peak reverse voltage

Maximum working reverse voltage

Maximum RMS voltage

400

480

350

420

Maximum DC blocking voltage

Maximum average forward rectified current

500

600

I_F(AV)

8.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

T_J, T_STG

V_AC

°C

Operating junction and storage temperature range

- 55 to + 150

1500

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

Document Number: 88766

Revision: 09-Nov-07

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

中文翻译

下载PDF

与UGB8HCT-HE3/81相关器件

型号	品牌	获取价格	描述	数据表
UGB8HT	VISHAY	获取价格	High Voltage Ultrafast Rectifier
UGB8HT/81	VISHAY	获取价格	Rectifier Diode, 1 Element, 8A, 500V V(RRM)
UGB8HTHE3/45	VISHAY	获取价格	DIODE 8 A, 500 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
UGB8HT-HE3/45	VISHAY	获取价格	DIODE 8 A, 500 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
UGB8HTHE3/81	VISHAY	获取价格	DIODE 8 A, 500 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
UGB8HT-HE3/81	VISHAY	获取价格	DIODE 8 A, 500 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
UGB8JCT	VISHAY	获取价格	Dual Ultrafast Plastic Rectifier Series
UGB8JCT/31	VISHAY	获取价格	Rectifier Diode, 8A, 600V V(RRM)
UGB8JCT/45	VISHAY	获取价格	Rectifier Diode, 8A, 600V V(RRM)
UGB8JCT/81	VISHAY	获取价格	Rectifier Diode, 8A, 600V V(RRM)

与UGB8HCT-HE3/81相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

UGB8HCT-HE3/81

UGB8HCT-HE3/81 技术参数

UGB8HCT-HE3/81 数据手册

与UGB8HCT-HE3/81相关器件

与UGB8HCT-HE3/81相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UGB8HCT-HE3/81

UGB8HCT-HE3/81 技术参数

UGB8HCT-HE3/81 数据手册

与UGB8HCT-HE3/81相关器件

与UGB8HCT-HE3/81相关文章

您还可以找

您在本页遇到什么问题？