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UGB8JT-E3/81 PDF预览

UGB8JT-E3/81

更新时间: 2024-11-24 07:05:31
品牌 Logo 应用领域
威世 - VISHAY 高压
页数 文件大小 规格书
5页 144K
描述
High Voltage Ultrafast Rectifier

UGB8JT-E3/81 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:D2PAK
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:1.74
应用:EFFICIENCY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.75 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向电流:30 µA
最大反向恢复时间:0.05 µs反向测试电压:480 V
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

UGB8JT-E3/81 数据手册

 浏览型号UGB8JT-E3/81的Datasheet PDF文件第2页浏览型号UGB8JT-E3/81的Datasheet PDF文件第3页浏览型号UGB8JT-E3/81的Datasheet PDF文件第4页浏览型号UGB8JT-E3/81的Datasheet PDF文件第5页 
UG(F,B)8HT & UG(F,B)8JT  
Vishay General Semiconductor  
High Voltage Ultrafast Rectifier  
FEATURES  
TO-220AC  
ITO-220AC  
• Glass passivated chip junction  
• Ultrafast recovery time  
• Soft recovery characteristics  
• Low switching losses, high efficiency  
• High forward surge capability  
2
2
1
1
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
UG8xT  
UGF8xT  
PIN 1  
PIN 1  
• Solder dip 260 °C, 40 s (for TO-220AC and  
ITO-220AC package)  
CASE  
PIN 2  
PIN 2  
TO-263AB  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
K
2
TYPICAL APPLICATIONS  
1
For use in high voltage and high frequency power  
factor correction application.  
UGB8xT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AC, ITO-220AC, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
8 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
VRRM  
IFSM  
trr  
500 V, 600 V  
100 A  
25 ns  
tfr  
500 ns  
1.5 V  
VF  
Polarity: As marked  
TJ max.  
150 °C  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
VRRM  
VRWM  
VRMS  
VDC  
UG8HT  
500  
UG8JT  
600  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum working reverse voltage  
Maximum RMS voltage  
V
V
V
V
A
400  
480  
350  
420  
Maximum DC blocking voltage  
Maximum average forward rectified current  
500  
600  
IF(AV)  
8.0  
100  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
TJ, TSTG  
VAC  
A
°C  
V
Operating junction and storage temperature range  
- 55 to + 150  
1500  
Isolation voltage (ITO-220AB only)  
from terminals to heatsink t = 1 min  
Document Number: 88767  
Revision: 12-Nov-07  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

UGB8JT-E3/81 替代型号

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