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UG4B-E3

更新时间: 2024-11-13 15:55:59
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
4页 77K
描述
DIODE 4 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, MINIATURE, PLASTIC PACKAGE-2, Rectifier Diode

UG4B-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.36
其他特性:FREE WHEELING DIODE应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 VJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:4 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.03 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

UG4B-E3 数据手册

 浏览型号UG4B-E3的Datasheet PDF文件第2页浏览型号UG4B-E3的Datasheet PDF文件第3页浏览型号UG4B-E3的Datasheet PDF文件第4页 
UG4A thru UG4D  
Vishay General Semiconductor  
Miniature Ultrafast Plastic Rectifier  
FEATURES  
• Glass passivated chip junction  
• Ultrafast reverse recovery time  
• Low forward voltage drop  
• Low switching losses, high efficiency  
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
DO-201AD  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in high frequency rectification and free-  
wheeling application in switching mode converters  
and inverters for consumer, computer and  
telecommunication.  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
trr  
4.0 A  
50 V to 200 V  
150 A  
MECHANICAL DATA  
20 ns  
Case: DO-201AD  
VF  
0.95 V  
Epoxy meets UL 94V-0 flammability rating  
Tj max.  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
VRRM  
VRMS  
VDC  
UG4A  
50  
UG4B  
100  
70  
UG4C  
150  
UG4D  
200  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
V
V
A
35  
105  
140  
Maximum DC blocking voltage  
Maximum average forward rectified current (see Fig. 1)  
50  
100  
150  
200  
IF(AV)  
4.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number 88763  
18-May-06  
www.vishay.com  
1

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