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UG4B-M3

更新时间： 2024-11-14 01:25:31
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威世 - VISHAY /
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4页 78K
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Miniature Ultrafast Plastic Rectifiers

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UG4B-M3 数据手册

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UG4A-M3, UG4B-M3, UG4C-M3, UG4D-M3  
www.vishay.com  
Vishay General Semiconductor  
Miniature Ultrafast Plastic Rectifiers  
FEATURES  
• Glass passivated pellet chip junction  
• Ultrafast reverse recovery time  
• Low forward voltage drop  
• Low switching losses, high efficiency  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
DO-201AD  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
For use in high frequency rectification and freewheeling  
application in switching mode converters and inverters for  
consumer, computer, and telecommunication.  
IF(AV)  
4.0 A  
VRRM  
IFSM  
50 V, 100 V, 150 V, 200 V  
150 A  
MECHANICAL DATA  
trr  
20 ns  
Case: DO-201AD  
Molding compound meets UL 94 V-0 flammability rating  
VF  
0.95 V  
Base P/N-M3  
commercial grade  
- halogen-free, RoHS-compliant, and  
TJ max.  
Package  
Diode variations  
150 °C  
DO-201AD  
Single die  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL UG4A  
UG4B  
100  
70  
UG4C  
150  
UG4D  
200  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
V
V
V
A
105  
140  
Maximum DC blocking voltage  
Maximum average forward rectified current (fig. 1)  
100  
150  
200  
IF(AV)  
4.0  
Peak forward surge current 8.3 ms single half sine-wave superimposed  
on rated load  
IFSM  
150  
A
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
0.95  
5.0  
300  
20  
UNIT  
(1)  
Maximum instantaneous forward voltage  
IF = 4.0 A  
VF  
V
TA = 25 °C  
Maximum DC reverse current  
at rated DC blocking voltage  
IR  
trr  
trr  
μA  
ns  
ns  
TA = 100 °C  
Maximum reverse recovery time  
Typical reverse recovery time  
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A  
TJ = 25 °C  
TJ = 100 °C  
TJ = 25 °C  
TJ = 100 °C  
30  
IF = 4.0 A, dI/dt = 50 A/μs, VR = 30 V,   
Irr = 10 % IRM  
50  
15  
IF = 4.0 A, dI/dt = 50 A/μs, VR = 30 V,   
Typical stored charge  
Qrr  
CJ  
nC  
pF  
Irr = 10 % IRM  
30  
Typical junction capacitance  
4.0 V, 1 MHz  
20  
Note  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Revision: 19-Feb-16  
Document Number: 89431  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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