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UFT800B PDF预览

UFT800B

更新时间: 2024-11-15 08:24:55
品牌 Logo 应用领域
德欧泰克 - DIOTEC 二极管
页数 文件大小 规格书
2页 127K
描述
Superfast Efficient Rectifiers - Single Diode

UFT800B 数据手册

 浏览型号UFT800B的Datasheet PDF文件第2页 
UFT800A ... UFT800J  
Version 2011-10-17  
UFT800A ... UFT800J  
Superfast Efficient Rectifiers – Single Diode  
Superschnelle Hocheffizienz-Gleichrichter – Einzeldiode  
Nominal current  
Nennstrom  
8 A  
50...600 V  
TO-220AC  
1.8 g  
10.1±0.3  
Ø 3.8±0.2  
1.2±0.2  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
4
4
4.5±0.2  
Plastic case  
Kunststoffgehäuse  
Type  
Typ  
1
3
Weight approx.  
Gewicht ca.  
2.67±0.2  
0.42±0.4  
1.3±0.1  
0.8±0.2  
1
3
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
5.08±0.1  
Standard packaging in tubes  
Standard Lieferform in Stangen  
Dimensions - Maße [mm]  
Maximum ratings and Characteristics  
Grenz- und Kennwerte  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V]  
Surge peak reverse voltage  
Stoßspitzensperrspannung  
VRSM [V]  
Forward voltage  
Durchlass-Spannung  
VF [V] 1)  
IF = 5 A  
< 0.9  
< 0.9  
< 0.9  
< 0.9  
< 1.15  
< 1.15  
< 1.6  
< 1.6  
IF = 8 A  
< 1.0  
UFT800A  
UFT800B  
UFT800C  
UFT800D  
UFT800F  
UFT800G  
UFT800H  
UFT800J  
50  
100  
150  
200  
300  
400  
500  
600  
50  
100  
150  
200  
300  
400  
500  
600  
< 1.0  
< 1.0  
< 1.0  
< 1.25  
< 1.25  
< 1.75  
< 1.75  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TC = 100°C  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
IFAV  
IFRM  
IFSM  
i2t  
8 A  
Repetitive peak forward current  
Periodischer Spitzenstrom  
22 A 2)  
112/125 A  
62 A2s  
Peak forward surge current, 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
-50...+150°C  
-50...+175°C  
Tj  
TS  
1
2
Tj = 25°C  
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 

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