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UFH60GA60P

更新时间: 2024-11-06 08:24:59
品牌 Logo 应用领域
威世 - VISHAY 电源电路整流二极管测试局域网超快恢复二极管超高速恢复二极管快速恢复二极管
页数 文件大小 规格书
7页 131K
描述
Tandem Insulated SOT-227 Power Module Hyperfast Rectifier, 60 A

UFH60GA60P 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:R-CUFM-X4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.57
Is Samacsys:N其他特性:HIGH RELIABILITY
应用:HYPER ULTRA FAST RECOVERY外壳连接:ISOLATED
配置:2 BANKS, SERIES CONNECTED, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.92 V
JESD-30 代码:R-CUFM-X4最大非重复峰值正向电流:200 A
元件数量:4相数:1
端子数量:4最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:56 A
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:230 W认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向电流:1000 µA
最大反向恢复时间:0.08 µs反向测试电压:600 V
子类别:Other Diodes表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

UFH60GA60P 数据手册

 浏览型号UFH60GA60P的Datasheet PDF文件第2页浏览型号UFH60GA60P的Datasheet PDF文件第3页浏览型号UFH60GA60P的Datasheet PDF文件第4页浏览型号UFH60GA60P的Datasheet PDF文件第5页浏览型号UFH60GA60P的Datasheet PDF文件第6页浏览型号UFH60GA60P的Datasheet PDF文件第7页 
UFH60GA60P  
Vishay Semiconductors  
Tandem Insulated SOT-227  
Power Module Hyperfast Rectifier, 60 A  
FEATURES  
• Two fully independent diodes  
• Ceramic fully insulated package  
(VISOL = 2500 VAC  
)
• Hyperfast reverse recovery  
• Optimized for power conversion: welding and industrial  
SMPS applications  
• Industry standard outline  
SOT-227  
• Plug-in compatible with other SOT-227 packages  
• Easy to assemble  
• Direct mounting to heatsink  
• UL approved file E78996  
• Compliant to RoHS directive 2002/95/EC  
• Designed and qualified for industrial level  
DESCRIPTION  
The UFH60GA60P insulated modules integrate two state of  
the art Vishay hyperfast recovery rectifiers in the compact,  
industry standard SOT-227 package. The planar structure of  
the diodes, and the platinum doping life time control,  
provide an ultrasoft recovery current shape, together with  
the best overall performance, ruggedness, and reliability  
characteristics.  
PRODUCT SUMMARY  
VR  
600 V  
60 A  
I
F(AV) per module at TC = 126 °C  
trr  
39 ns  
These devices are thus intended for high frequency  
applications in which the switching energy is designed not  
to be a predominant portion of the total energy, such as in  
the output rectification stage of welding machines, SMPS,  
and dc-to-dc converters. Their extremely optimized stored  
charge and low recovery current reduce both over  
dissipation in the switching elements (and snubbers) and  
EMI/RFI.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Cathode to anode voltage  
V
Continuous forward current per diode  
Single pulse forward current per diode  
Maximum power dissipation per module  
RMS isolation voltage  
IF  
TC = 85 °C  
56  
A
IFSM  
TC = 25 °C  
200  
PD  
TC = 85 °C  
230  
W
V
VISOL  
TJ, TStg  
Any terminal to case, t = 1 min  
2500  
- 55 to 175  
Operating junction and storage temperatures  
°C  
Document Number: 94663  
Revision: 22-Jul-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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