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UFL200FA60P PDF预览

UFL200FA60P

更新时间: 2024-11-06 08:24:59
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
8页 156K
描述
Insulated Ultrafast Rectifier Module, 200 A

UFL200FA60P 技术参数

生命周期:Transferred包装说明:R-CUFM-X4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.59Is Samacsys:N
其他特性:UL RECOGNIZED应用:ULTRA FAST SOFT RECOVERY
外壳连接:ISOLATED配置:SEPARATE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-CUFM-X4最大非重复峰值正向电流:1000 A
元件数量:4相数:1
端子数量:4最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:144 A
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大反向恢复时间:0.141 µs表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
Base Number Matches:1

UFL200FA60P 数据手册

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UFL200FA60P  
Vishay Semiconductors  
Insulated Ultrafast Rectifier Module, 200 A  
FEATURES  
• Two fully independent diodes  
• Ceramic fully insulated package  
(VISOL = 2500 VAC  
)
• Ultrafast reverse recovery  
• Ultrasoft reverse recovery current shape  
• Low forward voltage  
SOT-227  
• Optimized for power conversion: Welding and industrial  
SMPS applications  
• Industry standard outline  
• Plug-in compatible with other SOT-227 packages  
• Easy to assemble  
• Direct mounting to heatsink  
• UL approved file E78996  
• Compliant to RoHS directive 2002/95/EC  
DESCRIPTION  
The UFL200FA60P insulated modules integrate two state of  
the art Vishay Semiconductors ultrafast recovery rectifiers in  
the compact, industry standard SOT-227 package. The  
planar structure of the diodes, and the platinum doping  
life-time control, provide a ultrasoft recovery current shape,  
together with the best overall performance, ruggedness and  
reliability characteristics.  
PRODUCT SUMMARY  
trr  
F(AV) at TC = 105 °C  
VR  
102 ns  
200 A  
600 V  
I
These devices are thus intended for high frequency  
applications in which the switching energy is designed not  
to be predominant portion of the total energy, such as in the  
output rectification stage of welding machines, SMPS,  
dc-to-dc converters. Their extremely optimized stored  
charge and low recovery current reduce both over  
dissipation in the switching elements (and snubbers) and  
EMI/RFI.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Cathode to anode voltage  
V
Continuous forward current per diode  
Single pulse forward current per diode  
Maximum power dissipation per module  
Isolation voltage  
IF  
TC = 85 °C  
144  
A
IFSM  
TC = 25 °C  
1000  
PD  
TC = 85 °C  
360  
W
V
VISOL  
TJ, TStg  
Any terminal to case, t = 1 min  
2500  
Operating junction and storage temperatures  
- 55 to 175  
°C  
Document Number: 94551  
Revision: 21-Jul-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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