Datasheet > UD1006FR-H

UD1006FR-H

更新时间： 2024-11-04 12:22:51

品牌	Logo	应用领域
三洋 - SANYO		二极管开关
页数	文件大小	规格书
5页	306K
描述
Diffused Junction Silicon Diode Low VF Switching Diode

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中文翻译

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数据手册

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UD1006FR-H 数据手册

UD1006FR

Ordering number : ENA1745A

SANYO Sem iconductors

DATA S HEET

Diffused Junction Silicon Diode

UD1006FR

Low V Switching Diode

Features

•

=600V

V =1.3V max (I =10A)

F F

Halogen free compliance

RRM

t =60ns(typ) (I =0.5A, I =1A)

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Symbol

Conditions

Ratings

Unit

600

RRM

RSM

50Hz resistive load, Sine wave Tc=79°C

Tc=25°C (SANYO’s ideal heat dissipation condition) Package limited

Sine wave 10ms 1pulse

R.M.S Forward Current

(RMS)

Surge Forward Current

120

150

FSM

Junction Temperature

°C

Storage Temperature

Tstg

--55 to +150

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: TO-220F-2FS

7532-001

• JEITA, JEDEC

: SC-67

• Minimum Packing Quantity : 50pcs./magazine

4.7

10.16

3.18

UD1006FR-H

2.54

Marking

UD1006

LOT No.

1.28

2.76

1.47 MAX

0.8

0.5

Electrical Connection

: This part is not a metal

but a resin

5.08

1 : Cathode

2 : Anode

SANYO : TO-220F-2FS

http://www.sanyosemi.com/en/network/

91212 TKIM/51910SA TKIM TC-00002308 No. A1745-1/5

12 3 4 5

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