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UCC27519DBV PDF预览

UCC27519DBV

更新时间: 2024-01-21 12:56:21
品牌 Logo 应用领域
德州仪器 - TI 驱动器栅极栅极驱动
页数 文件大小 规格书
24页 670K
描述
Single Channel High-Speed, Low-Side Gate Driver

UCC27519DBV 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:LSSOP, TSOP5/6,.11,37
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:1.18
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:418361Samacsys Pin Count:5
Samacsys Part Category:Undefined or MiscellaneousSamacsys Package Category:SOT23 (5-Pin)
Samacsys Footprint Name:DBV005ASamacsys Released Date:2018-02-27 08:56:18
Is Samacsys:N接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G5JESD-609代码:e4
长度:2.9 mm湿度敏感等级:1
端子数量:5最高工作温度:140 °C
最低工作温度:-40 °C最大输出电流:4 A
标称输出峰值电流:4 A封装主体材料:PLASTIC/EPOXY
封装代码:LSSOP封装等效代码:TSOP5/6,.11,37
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):260电源:12 V
认证状态:Not Qualified座面最大高度:1.45 mm
子类别:MOSFET Drivers标称供电电压:12 V
表面贴装:YES温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:1.6 mm
Base Number Matches:1

UCC27519DBV 数据手册

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UCC27518  
UCC27519  
www.ti.com  
SLUSB33 MAY 2012  
Single Channel High-Speed, Low-Side Gate Driver  
(Based On CMOS Input Threshold with 4-A Peak Source and 4-A Peak Sink)  
Check for Samples: UCC27518 , UCC27519  
1
FEATURES  
APPLICATIONS  
Low-Cost, Gate-Driver Device Offering  
Superior Replacement of NPN and PNP  
Discrete Solutions  
Switch-Mode Power Supplies  
DC-to-DC Converters  
Companion Gate Driver Devices for Digital  
Power Controllers  
Pin-to-Pin Compatible With TI's TPS2828 and  
the TPS2829  
Solar Power, Motor Control, UPS  
4-A Peak Source and 4-A Peak Sink  
Symmetrical Drive  
Gate Driver for Emerging Wide Band-Gap  
Power Devices (such as GaN)  
Fast Propagation Delays (17-ns typical)  
Fast Rise and Fall Times (8-ns and 7-ns  
typical)  
DESCRIPTION  
The UCC27518 and UCC27519 single-channel, high-  
speed, low-side gate driver device is capable of  
effectively driving MOSFET and IGBT power  
switches. Using a design that inherently minimizes  
shoot-through current, UCC27518 and UCC27519  
are capable of sourcing and sinking high, peak-  
current pulses into capacitive loads offering rail-to-rail  
drive capability and extremely small propagation  
delay typically 17 ns.  
4.5-V to 18-V Single Supply Range  
Outputs Held Low During VDD UVLO (ensures  
glitch free operation at power-up and power-  
down)  
CMOS Input Logic Threshold (function of  
supply voltage with hysteresis)  
Hysteretic Logic Thresholds for High Noise  
Immunity  
The UCC27518 and UCC27519 provide 4-A source,  
4-A sink (symmetrical drive) peak-drive current  
capability at VDD = 12 V.  
EN Pin for Enable Function (allowed to be no  
connect)  
The UCC27518 and UCC27519 are designed to  
operate over a wide VDD range of 4.5 V to 18 V and  
wide temperature range of -40°C to 140°C. Internal  
Under Voltage Lockout (UVLO) circuitry on VDD pin  
holds output low outside VDD operating range. The  
capability to operate at low voltage levels such as  
below 5 V, along with best in class switching  
characteristics, is especially suited for driving  
emerging wide band-gap power switching devices  
such as GaN power semiconductor devices.  
Output Held Low when Input Pins are Floating  
Input Pin Absolute Maximum Voltage Levels  
Not Restricted by VDD Pin Bias Supply  
Voltage  
Operating Temperature Range of -40°C to  
140°C  
5-Pin DBV Package (SOT-23)  
Typical Application Diagrams  
UCC27518/19  
EN VDD  
4.5 V to 18 V  
V+  
EN  
1
2
3
5
C1  
Q1  
GND  
R1  
IN  
IN+/IN-  
OUT  
4
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2012, Texas Instruments Incorporated  

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