是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DIP |
包装说明: | DIP, DIP8,.3 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | Factory Lead Time: | 6 weeks |
风险等级: | 5.29 | 高边驱动器: | NO |
输入特性: | STANDARD | 接口集成电路类型: | BUFFER OR INVERTER BASED MOSFET DRIVER |
JESD-30 代码: | R-PDIP-T8 | JESD-609代码: | e4 |
长度: | 9.81 mm | 功能数量: | 2 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 输出特性: | TOTEM-POLE |
最大输出电流: | 4 A | 标称输出峰值电流: | 4 A |
输出极性: | TRUE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 4.5/15 V |
认证状态: | Not Qualified | 座面最大高度: | 5.08 mm |
子类别: | MOSFET Drivers | 最大压摆率: | 0.75 mA |
最大供电电压: | 15 V | 最小供电电压: | 4.5 V |
标称供电电压: | 14 V | 表面贴装: | NO |
技术: | BICMOS | 温度等级: | AUTOMOTIVE |
端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 断开时间: | 0.05 µs |
接通时间: | 0.04 µs | 宽度: | 7.62 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MC33152DR2G | ONSEMI |
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MC34151DR2G | ONSEMI |
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