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MC33152DR2G PDF预览

MC33152DR2G

更新时间: 2024-09-28 12:02:15
品牌 Logo 应用领域
安森美 - ONSEMI 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
12页 228K
描述
High Speed Dual MOSFET Drivers

MC33152DR2G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:0.42
高边驱动器:YES接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm湿度敏感等级:1
功能数量:2端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
标称输出峰值电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:12 V
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:MOSFET Drivers最大供电电压:18 V
最小供电电压:6.5 V标称供电电压:12 V
表面贴装:YES技术:BIPOLAR
温度等级:INDUSTRIAL端子面层:Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
断开时间:0.12 µs接通时间:0.12 µs
宽度:3.9 mmBase Number Matches:1

MC33152DR2G 数据手册

 浏览型号MC33152DR2G的Datasheet PDF文件第2页浏览型号MC33152DR2G的Datasheet PDF文件第3页浏览型号MC33152DR2G的Datasheet PDF文件第4页浏览型号MC33152DR2G的Datasheet PDF文件第5页浏览型号MC33152DR2G的Datasheet PDF文件第6页浏览型号MC33152DR2G的Datasheet PDF文件第7页 
MC34152, MC33152,  
NCV33152  
High Speed Dual  
MOSFET Drivers  
The MC34152/MC33152 are dual noninverting high speed drivers  
specifically designed for applications that require low current digital  
signals to drive large capacitive loads with high slew rates. These  
devices feature low input current making them CMOS/LSTTL logic  
compatible, input hysteresis for fast output switching that is  
independent of input transition time, and two high current totem pole  
outputs ideally suited for driving power MOSFETs. Also included is  
an undervoltage lockout with hysteresis to prevent system erratic  
operation at low supply voltages.  
http://onsemi.com  
MARKING  
DIAGRAMS  
8
PDIP8  
P SUFFIX  
CASE 626  
MC3x152P  
AWL  
YYWWG  
Typical applications include switching power supplies, dctodc  
converters, capacitor charge pump voltage doublers/inverters, and  
motor controllers.  
8
1
1
This device is available in dualinline and surface mount packages.  
8
SOIC8  
D SUFFIX  
CASE 751  
3x152  
Features  
8
ALYWG  
Two Independent Channels with 1.5 A Totem Pole Outputs  
Output Rise and Fall Times of 15 ns with 1000 pF Load  
CMOS/LSTTL Compatible Inputs with Hysteresis  
Undervoltage Lockout with Hysteresis  
Low Standby Current  
1
G
1
x
A
= 3 or 4  
= Assembly Location  
WL, L = Wafer Lot  
YY, Y = Year  
Efficient High Frequency Operation  
WW, W = Work Week  
G or G = PbFree Package  
Enhanced System Performance with Common Switching Regulator  
(Note: Microdot may be in either location)  
Control ICs  
NCV Prefix for Automotive and Other Applications Requiring Site  
and Change Controls  
PIN CONNECTIONS  
These are PbFree and HalideFree Devices  
N.C.  
Logic Input A  
GND  
1
2
3
4
8
7
6
5
N.C.  
V
CC  
6
Drive Output A  
+
V
CC  
-
5.7V  
Logic Input B  
Drive Output B  
Drive Output A  
7
(Top View)  
Logic  
Input A  
2
100k  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 10 of this data sheet.  
Drive Output B  
5
Logic  
Input B  
4
100k  
GND  
3
Figure 1. Representative Diagram  
©
Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011Rev. 12  
MC34152/D  

MC33152DR2G 替代型号

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MC33151DG ONSEMI

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