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MC33153D PDF预览

MC33153D

更新时间： 2024-09-27 22:54:59
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 外围驱动器栅极驱动程序和接口接口集成电路光电二极管双极性晶体管栅极驱动
页数 文件大小 规格书
12页 194K
描述
SINGLE IGBT GATE DRIVER

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中文翻译

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MC33153D 技术参数

生命周期：Transferred零件包装代码：SOIC
包装说明：SOP, SOP8,.25针数：8
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.05
Is Samacsys：N内置保护：OVER CURRENT; UNDER VOLTAGE
输入特性：SCHMITT TRIGGER接口集成电路类型：BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
功能数量：1端子数量：8
最高工作温度：105 °C最低工作温度：-40 °C
输出特性：TOTEM-POLE输出电流流向：SOURCE AND SINK
标称输出峰值电流：2 A输出极性：INVERTED
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
认证状态：Not Qualified表面贴装：YES
技术：BIPOLAR温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：DUAL断开时间：0.3 µs
接通时间：0.3 µsBase Number Matches：1

MC33153D 数据手册

 浏览型号MC33153D的Datasheet PDF文件第2页浏览型号MC33153D的Datasheet PDF文件第3页浏览型号MC33153D的Datasheet PDF文件第4页浏览型号MC33153D的Datasheet PDF文件第5页浏览型号MC33153D的Datasheet PDF文件第6页浏览型号MC33153D的Datasheet PDF文件第7页 
Order this document by MC33153/D  
The MC33153 is specifically designed as an IGBT driver for high power  
applications that include ac induction motor control, brushless dc motor  
control and uninterruptable power supplies. Although designed for driving  
discrete and module IGBTs, this device offers a cost effective solution for  
driving power MOSFETs and Bipolar Transistors. Device protection features  
include the choice of desaturation or overcurrent sensing and undervoltage  
detection. These devices are available in dual–in–line and surface mount  
packages and include the following features:  
SINGLE IGBT  
GATE DRIVER  
SEMICONDUCTOR  
TECHNICAL DATA  
• High Current Output Stage: 1.0 A Source/2.0 A Sink  
• Protection Circuits for Both Conventional and Sense IGBTs  
• Programmable Fault Blanking Time  
• Protection against Overcurrent and Short Circuit  
• Undervoltage Lockout Optimized for IGBT’s  
• Negative Gate Drive Capability  
• Cost Effectively Drives Power MOSFETs and Bipolar Transistors  
8
1
P SUFFIX  
PLASTIC PACKAGE  
CASE 626  
Representative Block Diagram  
8
V
CC  
1
6
Short Circuit  
Comparator  
D SUFFIX  
PLASTIC PACKAGE  
CASE 751  
V
V
CC  
CC  
Short Circuit  
Latch  
S
Fault  
V
CC  
Q
(SO–8)  
Output  
R
7
Overcurrent  
Comparator  
Current  
Sense  
1 Input  
Overcurrent  
Latch  
130 mV  
V
EE  
S
Q
65 mV  
CC  
R
V
V
EE  
PIN CONNECTIONS  
Kelvin  
Gnd  
V
CC  
2
8
270 µA  
Fault  
Current Sense  
Input  
Fault Blanking/  
Desaturation Input  
1
2
3
4
8
7
6
5
Blanking/  
Desaturation  
Input  
6.5 V  
Fault Blanking/  
Kelvin Gnd  
Fault Output  
V
EE  
Desaturation  
Comparator  
V
V
EE  
CC  
V
CC  
Output  
Stage  
V
CC  
Input  
Drive Output  
Drive  
Output  
Input  
V
(Top View)  
4
CC  
5
Under  
Voltage  
Lockout  
100 k  
V
EE  
V
ORDERING INFORMATION  
Operating  
EE  
12 V/  
11 V  
Temperature Range  
Device  
Package  
3
V
EE  
MC33153D  
MC33153P  
SO–8  
DIP–8  
T
A
= –40° to +105°C  
This device contains 133 active transistors.  
Motorola, Inc. 1998  
Rev 2  
1234567...12

中文翻译

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与MC33153D相关器件

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MC33153DG ONSEMI

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MC33153DR1 MOTOROLA

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 		2A BUF OR INV BASED PRPHL DRVR, PDSO8, PLASTIC, SOP-8
MC33153DR2 ONSEMI

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 		Single IGBT Gate Driver
MC33153DR2 MOTOROLA

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 		2A BUF OR INV BASED PRPHL DRVR, PDSO8, PLASTIC, SOP-8
MC33153DR2G ONSEMI

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 		Single IGBT Gate Driver
MC33153P ONSEMI

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 		Single IGBT Gate Driver
MC33153P MOTOROLA

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 		SINGLE IGBT GATE DRIVER
MC33153PG ONSEMI

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 		Single IGBT Gate Driver
MC33154 MOTOROLA

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 		SINGLE IGBT HIGH CURRENT GATE DRIVER
MC33154D MOTOROLA

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 		SINGLE IGBT HIGH CURRENT GATE DRIVER

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