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MC33153D PDF预览

MC33153D

更新时间: 2024-09-28 11:09:23
品牌 Logo 应用领域
安森美 - ONSEMI 驱动器MOSFET驱动器栅极驱动程序和接口接口集成电路光电二极管双极性晶体管栅极驱动
页数 文件大小 规格书
13页 131K
描述
Single IGBT Gate Driver

MC33153D 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.17Is Samacsys:N
内置保护:OVER CURRENT; OVER VOLTAGE接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.9 mm湿度敏感等级:1
功能数量:1端子数量:8
最高工作温度:105 °C最低工作温度:-40 °C
输出电流流向:SOURCE AND SINK标称输出峰值电流:2 A
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
电源:15 V认证状态:Not Qualified
座面最大高度:1.75 mm子类别:Peripheral Drivers
标称供电电压:15 V表面贴装:YES
技术:BIPOLAR温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30断开时间:0.3 µs
接通时间:0.3 µs宽度:3.9 mm
Base Number Matches:1

MC33153D 数据手册

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MC33153  
Single IGBT Gate Driver  
The MC33153 is specifically designed as an IGBT driver for high  
power applications that include ac induction motor control, brushless  
dc motor control and uninterruptable power supplies. Although  
designed for driving discrete and module IGBTs, this device offers a  
cost effective solution for driving power MOSFETs and Bipolar  
Transistors. Device protection features include the choice of  
desaturation or overcurrent sensing and undervoltage detection. These  
devices are available in dual−in−line and surface mount packages.  
http://onsemi.com  
MARKING  
DIAGRAMS  
Features  
8
High Current Output Stage: 1.0 A Source/2.0 A Sink  
Protection Circuits for Both Conventional and Sense IGBTs  
Programmable Fault Blanking Time  
SOIC−8  
D SUFFIX  
CASE 751  
33153  
ALYW  
G
1
1
Protection against Overcurrent and Short Circuit  
Undervoltage Lockout Optimized for IGBT’s  
Negative Gate Drive Capability  
Cost Effectively Drives Power MOSFETs and Bipolar Transistors  
Pb−Free Packages are Available  
8
1
PDIP−8  
P SUFFIX  
CASE 626  
MC33153P  
AWL  
YYWWG  
1
V
V
CC  
6
A
= Assembly Location  
L, WL = Wafer Lot  
Y, YY = Year  
Short Circuit  
Comparator  
V
CC  
CC  
Short Circuit  
Latch  
W, WW = Work Week  
S
Fault  
Output  
V
CC  
Q
G or G = Pb−Free Package  
R
7
Overcurrent  
Comparator  
Current  
Sense  
1 Input  
(Note: Microdot may be in either location)  
Overcurrent  
Latch  
130 mV  
V
EE  
S
Q
65 mV  
CC  
R
PIN CONNECTIONS  
V
V
EE  
Kelvin  
GND  
V
CC  
2
8
Current Sense  
Input  
Fault Blanking/  
Desaturation Input  
270 mA  
1
2
3
4
8
7
6
5
Fault  
Blanking/  
Desaturation  
Input  
Kelvin GND  
Fault Output  
6.5 V  
Fault Blanking/  
Desaturation  
Comparator  
V
EE  
V
V
EE  
CC  
V
CC  
Input  
Drive Output  
Output  
Stage  
V
CC  
(Top View)  
Drive  
Output  
Input  
V
CC  
4
5
Under  
Voltage  
Lockout  
100 k  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
V
EE  
V
EE  
12 V/  
11 V  
3
V
EE  
This device contains 133 active transistors.  
Figure 1. Representative Block Diagram  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 5  
MC33153/D  

MC33153D 替代型号

型号 品牌 替代类型 描述 数据表
MC33153DR2 ONSEMI

完全替代

Single IGBT Gate Driver
MC33153DG ONSEMI

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Single IGBT Gate Driver
MC33153DR2G ONSEMI

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Single IGBT Gate Driver

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