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MC33153DG PDF预览

MC33153DG

更新时间： 2024-09-28 11:09:23
品牌 Logo 应用领域
安森美 - ONSEMI 驱动器栅极双极性晶体管栅极驱动
页数 文件大小 规格书
13页 131K
描述
Single IGBT Gate Driver

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中文翻译

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MC33153DG 数据手册

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MC33153  
Single IGBT Gate Driver  
The MC33153 is specifically designed as an IGBT driver for high  
power applications that include ac induction motor control, brushless  
dc motor control and uninterruptable power supplies. Although  
designed for driving discrete and module IGBTs, this device offers a  
cost effective solution for driving power MOSFETs and Bipolar  
Transistors. Device protection features include the choice of  
desaturation or overcurrent sensing and undervoltage detection. These  
devices are available in dual−in−line and surface mount packages.  
http://onsemi.com  
MARKING  
DIAGRAMS  
Features  
8
• High Current Output Stage: 1.0 A Source/2.0 A Sink  
• Protection Circuits for Both Conventional and Sense IGBTs  
• Programmable Fault Blanking Time  
SOIC−8  
D SUFFIX  
CASE 751  
33153  
ALYW  
G
1
1
• Protection against Overcurrent and Short Circuit  
• Undervoltage Lockout Optimized for IGBT’s  
• Negative Gate Drive Capability  
• Cost Effectively Drives Power MOSFETs and Bipolar Transistors  
• Pb−Free Packages are Available  
8
1
PDIP−8  
P SUFFIX  
CASE 626  
MC33153P  
AWL  
YYWWG  
1
V
V
CC  
6
A
= Assembly Location  
L, WL = Wafer Lot  
Y, YY = Year  
Short Circuit  
Comparator  
V
CC  
CC  
Short Circuit  
Latch  
W, WW = Work Week  
S
Fault  
Output  
V
CC  
Q
G or G = Pb−Free Package  
R
7
Overcurrent  
Comparator  
Current  
Sense  
1 Input  
(Note: Microdot may be in either location)  
Overcurrent  
Latch  
130 mV  
V
EE  
S
Q
65 mV  
CC  
R
PIN CONNECTIONS  
V
V
EE  
Kelvin  
GND  
V
CC  
2
8
Current Sense  
Input  
Fault Blanking/  
Desaturation Input  
270 mA  
1
2
3
4
8
7
6
5
Fault  
Blanking/  
Desaturation  
Input  
Kelvin GND  
Fault Output  
6.5 V  
Fault Blanking/  
Desaturation  
Comparator  
V
EE  
V
V
EE  
CC  
V
CC  
Input  
Drive Output  
Output  
Stage  
V
CC  
(Top View)  
Drive  
Output  
Input  
V
CC  
4
5
Under  
Voltage  
Lockout  
100 k  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
V
EE  
V
EE  
12 V/  
11 V  
3
V
EE  
This device contains 133 active transistors.  
Figure 1. Representative Block Diagram  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
July, 2006 − Rev. 5  
MC33153/D  
1234567...13

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MC33153DG 替代型号

型号 品牌 替代类型 描述 数据表
MC33153D ONSEMI

类似代替

 Single IGBT Gate Driver
MC33153DR2 ONSEMI

类似代替

 Single IGBT Gate Driver
MC33153DR2G ONSEMI

类似代替

 Single IGBT Gate Driver

与MC33153DG相关器件

型号 品牌 获取价格 描述 数据表
MC33153DR1 MOTOROLA

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 		2A BUF OR INV BASED PRPHL DRVR, PDSO8, PLASTIC, SOP-8
MC33153DR2 ONSEMI

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 		Single IGBT Gate Driver
MC33153DR2 MOTOROLA

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 		2A BUF OR INV BASED PRPHL DRVR, PDSO8, PLASTIC, SOP-8
MC33153DR2G ONSEMI

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 		Single IGBT Gate Driver
MC33153P ONSEMI

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 		Single IGBT Gate Driver
MC33153P MOTOROLA

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 		SINGLE IGBT GATE DRIVER
MC33153PG ONSEMI

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 		Single IGBT Gate Driver
MC33154 MOTOROLA

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 		SINGLE IGBT HIGH CURRENT GATE DRIVER
MC33154D MOTOROLA

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 		SINGLE IGBT HIGH CURRENT GATE DRIVER
MC33154DR2 MOTOROLA

获取价格

 		4A BUF OR INV BASED PRPHL DRVR, PDSO8, PLASTIC, SOP-8

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