是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DIP |
包装说明: | DIP, DIP8,.3 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | Factory Lead Time: | 2 weeks |
风险等级: | 0.58 | 高边驱动器: | YES |
接口集成电路类型: | BUFFER OR INVERTER BASED MOSFET DRIVER | JESD-30 代码: | R-PDIP-T8 |
JESD-609代码: | e3 | 长度: | 9.78 mm |
功能数量: | 2 | 端子数量: | 8 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
标称输出峰值电流: | 1.5 A | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 260 | 电源: | 12 V |
认证状态: | Not Qualified | 座面最大高度: | 4.45 mm |
子类别: | MOSFET Drivers | 最大供电电压: | 18 V |
最小供电电压: | 6.5 V | 标称供电电压: | 12 V |
表面贴装: | NO | 技术: | BIPOLAR |
温度等级: | INDUSTRIAL | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
断开时间: | 0.12 µs | 接通时间: | 0.12 µs |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MC34152PG | ONSEMI |
完全替代 |
High Speed Dual MOSFET Drivers | |
MC33152DR2G | ONSEMI |
类似代替 |
High Speed Dual MOSFET Drivers | |
MC33152P | ONSEMI |
类似代替 |
HIGH SPEED DUAL MOSFET DRIVERS |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MC33152VDG | ONSEMI |
获取价格 |
High Speed Dual MOSFET Drivers | |
MC33152VDR2 | ONSEMI |
获取价格 |
HIGH SPEED DUAL MOSFET DRIVERS | |
MC33152VDR2G | ONSEMI |
获取价格 |
High Speed Dual MOSFET Drivers | |
MC33153 | ONSEMI |
获取价格 |
AC-DC Offline Switching Controllers/Regulators | |
MC33153_06 | ONSEMI |
获取价格 |
Single IGBT Gate Driver | |
MC33153D | ONSEMI |
获取价格 |
Single IGBT Gate Driver | |
MC33153D | MOTOROLA |
获取价格 |
SINGLE IGBT GATE DRIVER | |
MC33153DG | ONSEMI |
获取价格 |
Single IGBT Gate Driver | |
MC33153DR1 | MOTOROLA |
获取价格 |
2A BUF OR INV BASED PRPHL DRVR, PDSO8, PLASTIC, SOP-8 | |
MC33153DR2 | ONSEMI |
获取价格 |
Single IGBT Gate Driver |