是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DIP |
包装说明: | DIP-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | Factory Lead Time: | 6 weeks |
风险等级: | 5.34 | Is Samacsys: | N |
高边驱动器: | NO | 接口集成电路类型: | BUFFER OR INVERTER BASED MOSFET DRIVER |
JESD-30 代码: | R-PDIP-T8 | JESD-609代码: | e4 |
长度: | 9.81 mm | 功能数量: | 1 |
端子数量: | 8 | 最高工作温度: | 105 °C |
最低工作温度: | -40 °C | 输出特性: | TOTEM-POLE |
最大输出电流: | 9 A | 标称输出峰值电流: | 9 A |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装等效代码: | DIP8,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 4.5/15 V | 认证状态: | Not Qualified |
座面最大高度: | 5.08 mm | 子类别: | MOSFET Drivers |
最大压摆率: | 0.65 mA | 最大供电电压: | 15 V |
最小供电电压: | 4.5 V | 标称供电电压: | 14 V |
表面贴装: | NO | 技术: | BICMOS |
温度等级: | INDUSTRIAL | 端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
断开时间: | 0.07 µs | 接通时间: | 0.07 µs |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
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