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UCC27323 PDF预览

UCC27323

更新时间: 2024-01-22 04:22:53
品牌 Logo 应用领域
德州仪器 - TI 驱动器
页数 文件大小 规格书
15页 222K
描述
DUAL 4-A PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS

UCC27323 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DIP
包装说明:DIP, DIP8,.3针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:1 week
风险等级:1.42高边驱动器:NO
接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVERJESD-30 代码:R-PDIP-T8
JESD-609代码:e4长度:9.81 mm
功能数量:2端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
输出特性:STANDARD最大输出电流:4 A
标称输出峰值电流:4 A输出极性:INVERTED
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP8,.3封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:4.5/15 V认证状态:Not Qualified
座面最大高度:5.08 mm子类别:MOSFET Drivers
最大压摆率:0.45 mA最大供电电压:15 V
最小供电电压:4.5 V标称供电电压:14 V
表面贴装:NO技术:BICMOS
温度等级:AUTOMOTIVE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:0.05 µs接通时间:0.04 µs
宽度:7.62 mmBase Number Matches:1

UCC27323 数据手册

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ꢀꢁꢁ ꢂ ꢃꢄ ꢂ ꢄ ꢅ ꢀꢁꢁ ꢂ ꢃꢄ ꢂ ꢆ ꢅ ꢀ ꢁꢁ ꢂꢃ ꢄꢂ ꢇ  
ꢀꢁꢁ ꢄ ꢃꢄ ꢂ ꢄ ꢅ ꢀꢁꢁ ꢄ ꢃꢄ ꢂ ꢆ ꢅ ꢀ ꢁꢁ ꢄꢃ ꢄꢂ ꢇ  
SLUS492B – JUNE 2001 – REVISED SEPTEMBER 2002  
ꢈ ꢀꢉ ꢊ ꢆ ꢋꢉ ꢌ ꢍꢉ ꢎ ꢏꢐ ꢑ ꢏ ꢒ ꢌꢍ ꢍꢈ ꢊ ꢓ ꢔꢕꢒ ꢐꢈꢍ ꢌꢓ ꢔ ꢍꢖ ꢗ ꢓꢒ ꢘꢍ ꢙ ꢈꢖꢐ ꢚꢍ ꢖꢒ  
FEATURES  
APPLICATIONS  
D
Industry-Standard Pin-Out  
D
D
D
D
Switch Mode Power Supplies  
DC/DC Converters  
Motor Controllers  
Line Drivers  
D
High Current Drive Capability of ±4 A at the  
Miller Plateau Region  
D
D
D
D
Efficient Constant Current Sourcing Using a  
Unique BiPolar & CMOS Output Stage  
TTL/CMOS Compatible Inputs Independent of  
Supply Voltage  
DESCRIPTION  
20-ns Typical Rise and 15-ns Typical Fall  
Times with 1.8-nF Load  
The UCC37323/4/5 family of high-speed dual MOSFET  
drivers can deliver large peak currents into capacitive  
loads.Three standard logic options are offered –  
dual-inverting, dual-noninverting and one-inverting and  
Typical Propagation Delay Times of 25 ns with  
Input Falling and 35 ns with Input Rising  
one-noninverting driver. The thermally enhanced 8-pin  
D
D
D
D
D
4-V to 15-V Supply Voltage  
Supply Current of 0.3 mA  
TM  
PowerPAD  
MSOP package (DGN) drastically lowers  
the thermal resistance to improve long-term reliability.  
It is also offered in the standard SOIC-8 (D) or PDIP-8  
(P) packages.  
Dual Outputs Can Be Paralleled for Higher  
Drive Current  
Available in Thermally Enhanced MSOP  
Using a design that inherently minimizes shoot-through  
current, these drivers deliver 4-A of current where it is  
needed most at the Miller plateau region during the  
MOSFET switching transition. A unique BiPolar and  
MOSFET hybrid output stage in parallel also allows  
efficient current sourcing and sinking at low supply  
voltages.  
TM  
PowerPAD  
Package with 4.7°C/W θjc  
Rated From –40°C to 85°C  
BLOCK DIAGRAM  
INVERTING  
N/C 1  
8
N/C  
7
6
OUTA  
VDD  
INA 2  
NON–INVERTING  
INVERTING  
GND 3  
5
OUTB  
INB 4  
NON–INVERTING  
UDG–01063  
PowerPADt is a trademark of Texas Instruments Incorporated.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments  
semiconductor products and disclaimers thereto appears at the end of this data sheet.  
ꢙꢧ  
Copyright 2002, Texas Instruments Incorporated  
ꢣ ꢧ ꢤ ꢣꢜ ꢝꢱ ꢟꢞ ꢢ ꢪꢪ ꢨꢢ ꢠ ꢢ ꢡ ꢧ ꢣ ꢧ ꢠ ꢤ ꢬ  
1
www.ti.com  

UCC27323 替代型号

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