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UCC1570 PDF预览

UCC1570

更新时间: 2024-01-28 11:34:46
品牌 Logo 应用领域
德州仪器 - TI 脉冲
页数 文件大小 规格书
9页 342K
描述
Low Power Pulse Width Modulator

UCC1570 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ObsoleteReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.92Is Samacsys:N
模拟集成电路 - 其他类型:SWITCHING CONTROLLER控制模式:VOLTAGE-MODE
控制技术:PULSE WIDTH MODULATION最大输入电压:16 V
最小输入电压:13.5 V标称输入电压:15 V
JESD-30 代码:S-CQCC-N20长度:8.89 mm
功能数量:1端子数量:20
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:1.2 A封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:QCCN封装等效代码:LCC20,.35SQ
封装形状:SQUARE封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:2.54 mm子类别:Switching Regulator or Controllers
表面贴装:YES切换器配置:SINGLE
最大切换频率:500 kHz技术:BICMOS
温度等级:MILITARY端子形式:NO LEAD
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8.89 mm
Base Number Matches:1

UCC1570 数据手册

 浏览型号UCC1570的Datasheet PDF文件第1页浏览型号UCC1570的Datasheet PDF文件第2页浏览型号UCC1570的Datasheet PDF文件第4页浏览型号UCC1570的Datasheet PDF文件第5页浏览型号UCC1570的Datasheet PDF文件第6页浏览型号UCC1570的Datasheet PDF文件第7页 
UCC1570  
UCC2570  
UCC3570  
ELECTRICAL CHARACTERISTICS: Unless otherwise stated, these specifications apply for TA = 0 to 70°C for the  
UCC3570, TA= –40 to 85°C for the UCC2570, TA=–55 to 125°C for the UCC1570, RISET=100k, RSLOPE=121k, CFREQ=180pF,  
CRAMP=150pF, VCC=11V and TA=TJ.  
PARAMETER  
TEST CONDITIONS  
Min  
Typ  
Max Units  
Line Sense  
Vth High Line Comparator  
Vth Low Line Comparator  
lib (VFWD)  
3.9  
4
1
0
4.1  
V
V
0.96  
1.04  
±100  
nA  
Oscillator  
Frequency  
90  
100  
110  
kHz  
Ramp Generator  
IRAMP/ISLOPE  
9
10  
10  
4
11  
11  
A/A  
A/A  
V
–IRAMP/IISET  
9
Peak Ramp Voltage  
Valley Ramp Voltage  
ISET Voltage Level  
Soft Start  
3.8  
0.95  
0.95  
4.2  
1
1.05  
1.05  
V
1
V
Saturation  
VCC = 11V, VCC Comparator Off  
25  
1
100  
1.2  
mV  
A/A  
ISOFTST/IISET  
0.8  
Pulse Width Modulator  
lib(FEEDBK)  
0
1
4
±100  
1.1  
n A  
V
FEEDBK  
Zero Duty Cycle  
0.9  
3.8  
Maximum Duty Cycle, (Note 1)  
4.2  
V
Current Limit  
lib(CURLIM)  
Vth Current Limit  
Vth Shutdown  
Fault Counter  
Vth  
0
±100  
220  
nA  
mV  
mV  
180  
500  
200  
600  
700  
3.8  
0.8  
4
0
1
4.2  
100  
1.2  
V
Vsat  
mV  
A/A  
ICOUNT/IISET  
Output Driver  
Vsat High  
IOUT = –100mA  
0.4  
0.4  
20  
1
1
V
V
Vsat Low  
IOUT = 100mA  
Rise/Fall Time  
COUT = 1nF, (Note 1)  
100  
ns  
Note 1: This parameter guaranteed by design but not 100% tested in production.  
PIN DESCRIPTIONS  
VCC: Chip supply voltage pin. Bypass to PGND with a VFWD: Voltage Feed Forward and Line Sense pin. Con-  
nect to input DC line using a resistive divider.  
low ESL/ESR 0.1µF capacitor plus a capacitor for gate  
charge storage. Lead lengths must be minimum.  
SLOPE: Program the charging current for RAMP with a  
resistor from this pin to GND. This pin will follow VFWD.  
PGND: Ground pin for the output driver. Keep connec-  
tions less than 2cm. Carefully maintain low impedance  
path for high current return.  
FEEDBK: Input to the pulse width modulator comparator.  
Drive this pin with an optocoupler to GND and a resistor  
to VREF. Modulation input range is from 1V to 4V.  
OUT: Gate drive output pin. Connect to the gate of a  
power MOSFET with a resistor greater than 2. Keep  
connection lengths under 2cm.  
ISET: A resistor from this pin to GND programs RAMP  
discharge current, FREQ current, SOFTST current, and  
COUNT current.  
3

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