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UC3725J PDF预览

UC3725J

更新时间: 2024-11-17 20:02:23
品牌 Logo 应用领域
德州仪器 - TI 驱动接口集成电路驱动器
页数 文件大小 规格书
5页 291K
描述
2A BUF OR INV BASED MOSFET DRIVER, CDIP8

UC3725J 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:DIP,针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.84
高边驱动器:YES接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-GDIP-T8功能数量:1
端子数量:8最高工作温度:70 °C
最低工作温度:标称输出峰值电流:2 A
封装主体材料:CERAMIC, GLASS-SEALED封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
认证状态:Not Qualified座面最大高度:5.08 mm
最大供电电压:15 V最小供电电压:
标称供电电压:8 V表面贴装:NO
温度等级:COMMERCIAL端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
断开时间:0.3 µs接通时间:0.3 µs
宽度:7.62 mmBase Number Matches:1

UC3725J 数据手册

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UC1725  
UC2725  
UC3725  
Isolated High Side FET Driver  
FEATURES  
DESCRIPTION  
Receives Both Power and Signal Across The UC1725 and its companion chip, the UC1724, provide all the nec-  
the Isolation Boundary  
essary features to drive an isolated MOSFET transistor from a TTL in-  
put signal. A unique modulation scheme is used to transmit both power  
and signals across an isolation boundary with a minimum of external  
components.  
9 to 15 Volt High Level Gate Drive  
Under-voltage Lockout  
Protection circuitry, including under-voltage lockout, over-current shut-  
down, and gate voltage clamping provide fault protection for the MOS-  
FET. High level gate drive is guaranteed to be greater than 9 volts and  
less than 15 volts under all conditions.  
Programmable Over-current Shutdown  
and Restart  
Output Enable Function  
Uses include isolated off-line full bridge and half bridge drives for driv-  
ing motors, switches, and any other load requiring full electrical isola-  
tion.  
The UC1725 is characterized for operation over the full military tem-  
perature range of -55°C to +125°C while the UC2725 and UC3725 are  
characterized for -25°C to +85°C and 0°C to +70°C respectively.  
BLOCK DIAGRAM  
UDG-92051-1  
1/94  

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