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UC3725N PDF预览

UC3725N

更新时间: 2024-11-29 23:38:55
品牌 Logo 应用领域
其他 - ETC 驱动器接口集成电路光电二极管
页数 文件大小 规格书
5页 317K
描述
MOSFET Driver

UC3725N 数据手册

 浏览型号UC3725N的Datasheet PDF文件第2页浏览型号UC3725N的Datasheet PDF文件第3页浏览型号UC3725N的Datasheet PDF文件第4页浏览型号UC3725N的Datasheet PDF文件第5页 
UC1725  
UC2725  
UC3725  
Isolated High Side FET Driver  
FEATURES  
DESCRIPTION  
Receives Both Power and Signal Across The UC1725 and its companion chip, the UC1724, provide all the nec-  
the Isolation Boundary  
essary features to drive an isolated MOSFET transistor from a TTL in-  
put signal. A unique modulation scheme is used to transmit both power  
and signals across an isolation boundary with a minimum of external  
components.  
9 to 15 Volt High Level Gate Drive  
Under-voltage Lockout  
Protection circuitry, including under-voltage lockout, over-current shut-  
down, and gate voltage clamping provide fault protection for the MOS-  
FET. High level gate drive is guaranteed to be greater than 9 volts and  
less than 15 volts under all conditions.  
Programmable Over-current Shutdown  
and Restart  
Output Enable Function  
Uses include isolated off-line full bridge and half bridge drives for driv-  
ing motors, switches, and any other load requiring full electrical isola-  
tion.  
The UC1725 is characterized for operation over the full military tem-  
perature range of -55°C to +125°C while the UC2725 and UC3725 are  
characterized for -25°C to +85°C and 0°C to +70°C respectively.  
BLOCK DIAGRAM  
UDG-92051-1  
1/94  
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