Datasheet > U634H256CD1C35

U634H256CD1C35

更新时间： 2024-11-06 23:38:47

品牌	Logo	应用领域
其他 - ETC		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
14页	240K
描述
NVRAM (EEPROM Based)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

U634H256CD1C35 数据手册

U634H256

PowerStore 32K x 8 nvSRAM

Packages:PDIP32 (600 mil)

SOP32 (300 mil)

Transfers from the EEPROM to the

SRAM (the RECALL operation) take

place automatically on power up.

The U634H256 combines the high

performance and ease of use of a

fast SRAM with nonvolatile data

Features

High-performance CMOS non-

Description

volatile static RAM 32768 x 8 bits

25, 35 and 45 ns Access Times

10, 15 and 20 ns Output Enable

Access Times

I_CC= 15 mA at 200 ns Cycle Time

Automatic STORE to EEPROM

on Power Down using external

capacitor

The U634H256 has two separate

modes of operation: SRAM mode

and nonvolatile mode. In SRAM

mode, the memory operates as an

ordinary static RAM. In nonvolatile

operation, data is transferred in

parallel from SRAM to EEPROM or

from EEPROM to SRAM. In this

mode SRAM functions are disab-

led.

integrity.

STORE cycles also may be initiated

under user control via a software

sequence or via a single pin (HSB).

Once a STORE cycle is initiated,

further input or output are disabled

until the cycle is completed.

Because a sequence of addresses

is used for STORE initiation, it is

important that no other read or write

accesses intervene in the sequence

or the sequence will be aborted.

RECALL cycles may also be initia-

ted by a software sequence.

Internally, RECALL is a two step

procedure. First, the SRAM data is

cleared and second, the nonvolatile

information is transferred into the

SRAM cells.

The RECALL operation in no way

alters the data in the EEPROM

cells. The nonvolatile data can be

recalled an unlimited number of

times.

Hardware or Software initiated

STORE

(STORE Cycle Time < 10 ms)

Automatic STORE Timing

10⁵STORE cycles to EEPROM

10 years data retention in

EEPROM

Automatic RECALL on Power Up

Software RECALL Initiation

(RECALL Cycle Time < 20 µs)

Unlimited RECALL cycles from

EEPROM

The U634H256 is a fast static RAM

(25, 35, 45 ns), with a nonvolatile

electrically

erasable

PROM

(EEPROM) element incorporated

in each static memory cell. The

SRAM can be read and written an

unlimited number of times, while

independent nonvolatile data resi-

des in EEPROM. Data transfers

from the SRAM to the EEPROM

(the STORE operation) take place

automatically upon power down

using charge stored in an external

100 µF capacitor.

Single 5 V ± 10 % Operation

Operating temperature ranges:

0 to 70 °C

-40 to 85 °C

CECC 90000 Quality Standard

ESD characterization according

MIL STD 883C M3015.7-HBM

(classification see IC Code

Numbers)

Pin Configuration

Pin Description

VCAP

A14

A12

VCCX

Signal Name Signal Description

HSB

A0 - A14

Address Inputs

Data In/Out

A13

DQ0 - DQ7

Chip Enable

A11

Output Enable

Write Enable

PDIP

SOP

n.c.

A10

VCCX

VSS

VCAP

Power Supply Voltage

Ground

DQ0

DQ1

DQ2

VSS

DQ7

DQ6

DQ5

DQ4

DQ3

Capacitor

Hardware Controlled Store/Busy

HSB

Top View

December 12, 1997

12 3 4 5 6 7...14

中文翻译

下载PDF

与U634H256CD1C35相关器件

型号	品牌	获取价格	描述	数据表
U634H256CD1C35G1	CYPRESS	获取价格	32KX8 NON-VOLATILE SRAM, 35ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32
U634H256CD1C35G1	SIMTEK	获取价格	Non-Volatile SRAM, 32KX8, 35ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32
U634H256CD1C45	SIMTEK	获取价格	32KX8 NON-VOLATILE SRAM, 45ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32
U634H256CD1C45G1	CYPRESS	获取价格	32KX8 NON-VOLATILE SRAM, 45ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32
U634H256CD1K25	SIMTEK	获取价格	32KX8 NON-VOLATILE SRAM, 25ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32
U634H256CD1K25G1	SIMTEK	获取价格	Non-Volatile SRAM, 32KX8, 25ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32
U634H256CD1K35	SIMTEK	获取价格	32KX8 NON-VOLATILE SRAM, 35ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32
U634H256CD1K35G1	SIMTEK	获取价格	Non-Volatile SRAM, 32KX8, 35ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32
U634H256CD1K45	SIMTEK	获取价格	32KX8 NON-VOLATILE SRAM, 45ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32
U634H256CD1K45G1	CYPRESS	获取价格	32KX8 NON-VOLATILE SRAM, 45ns, PDIP32, 0.600 INCH, PLASTIC, DIP-32

与U634H256CD1C35相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

16
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

13
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

37
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

34

产品中心

服务支持

精选活动

关于我们

帮助中心

U634H256CD1C35

U634H256CD1C35 数据手册

与U634H256CD1C35相关器件

与U634H256CD1C35相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

U634H256CD1C35

U634H256CD1C35 数据手册

与U634H256CD1C35相关器件

与U634H256CD1C35相关文章

您还可以找

您在本页遇到什么问题？