Datasheet > U309(TO-18)

U309(TO-18)

更新时间： 2024-11-18 17:17:31

品牌	Logo	应用领域
MICROSS		/
页数	文件大小	规格书
1页	290K
描述
Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

U309(TO-18) 数据手册

U309

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix U309

FEATURES

The U309 is a high frequency n-channel JFET offering a

DIRECT REPLACEMENT FOR SILICONIX U309

OUTSTANDING HIGH FREQUENCY GAIN

LOW HIGH FREQUENCY NOISE

wide range and low noise performance. The

hermetically sealed TO-18 package is well suited for

high reliability and harsh environment applications.

G_pg= 11.5dB

NF = 2.7dB

ABSOLUTE MAXIMUM RATINGS @ 25°C¹

(See Packaging Information).

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

Gate Current

MAXIMUM VOLTAGES

Gate to Drain Voltage or Gate to Source Voltage

U309 Benefits:

‐55°C to +150°C

‐55°C to +135°C

High Power Low Noise gain

Dynamic Range greater than 100dB

Easily matched to 75Ω input

500mW

10mA

‐25V

U309 Applications:

UHV / VHF Amplifiers

Mixers

Oscillators

U309 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

V_GS(F)

V_GS(off)

I_DSS

CHARACTERISTIC

MIN

‐25

0.7

‐1

‐‐

TYP.

‐‐

MAX

‐‐

‐4

‐‐

UNIT

CONDITIONS

Gate to Source Breakdown Voltage

Gate to Source Forward Voltage

Gate to Source Cutoff Voltage

Drain to Source Saturation Current²

Gate Operating Current (Note 3)

Drain to Source On Resistance

V_DS= 0V, I_G= ‐1µA

V_DS= 0V, I_G= 10mA

V_DS= 10V, I_D= 1nA

V_DS= 10V, V_GS= 0V

V_DG= 9V, I_D= 10mA

V_GS= 0V, I_D= 1mA

I_G

r_DS(on)

‐15

‐‐

U309 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

g_fs

CHARACTERISTIC

Forward Transconductance

Output Conductance

Input Capacitance

MIN

‐‐

TYP.

110

MAX

‐‐

250

UNIT

µS

CONDITIONS

V_DS= 10V, I_D= 10mA , f = 1kHz

g_os

C_iss

‐‐

V_DS= 10V, V_GS= ‐10V , f = 1MHz

Click To Buy

C_rss

e_n

Reverse Transfer Capacitance

Equivalent Noise Voltage

‐‐

1.9

‐‐

2.5

‐‐

nV/√Hz

V_DS= 10V, I_D= 10mA , f = 100Hz

U309 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX

UNIT

CONDITIONS

Noise Figure

f = 105MHz

f = 450MHz

f = 105MHz

‐‐

1.5

2.7

‐‐

G_pg

g_fg

Power Gain³

f = 450MHz

f = 105MHz

‐‐

11.5

‐‐

V_DS= 10V, I_D= 10mA

Forward Transconductance

f = 450MHz

f = 105MHz

f = 450MHz

‐‐

g_og

Output Conductance

0.16

0.55

Note 1 ‐ Absolute maximum ratings are limiting values above which U309 serviceability may be impaired.

Note 2 ‐ Pulse test : PW ≤ 300µs, Duty Cycle ≤ 3%

Note 3 ‐ Measured at optimum input noise match

Micross Components Europe

TO-18 (Bottom View)

Available Packages:

U309 in TO-18

U309 in bare die.

Please contact Micross for full

package and die dimensions

Tel: +44 1603 788967

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx

中文翻译

下载PDF

与U309(TO-18)相关器件

型号	品牌	获取价格	描述	数据表
U309_TO-18	MICROSS	获取价格	N-CHANNEL JFET
U309-10	CALOGIC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
U309E	VISHAY	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
U309-TO-18-3L-ROHS	Linear	获取价格	Transistor,
U30BCT	VISHAY	获取价格	Dual Common-Cathode Ultrafast Plastic Rectifier
U30C05	MOSPEC	获取价格	Switchmode Dual Ultrafast Power Rectifiers
U30C10	MOSPEC	获取价格	Switchmode Dual Ultrafast Power Rectifiers
U30C15	MOSPEC	获取价格	Switchmode Dual Ultrafast Power Rectifiers
U30C20	MOSPEC	获取价格	Switchmode Dual Ultrafast Power Rectifiers
U30C20A	THINKISEMI	获取价格	30 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers

与U309(TO-18)相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

U309(TO-18)

U309(TO-18) 数据手册

与U309(TO-18)相关器件

与U309(TO-18)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

U309(TO-18)

U309(TO-18) 数据手册

与U309(TO-18)相关器件

与U309(TO-18)相关文章

您还可以找

您在本页遇到什么问题？