5秒后页面跳转
U309(TO-18) PDF预览

U309(TO-18)

更新时间: 2024-02-06 00:35:30
品牌 Logo 应用领域
MICROSS /
页数 文件大小 规格书
1页 290K
描述
Transistor

U309(TO-18) 数据手册

  
U309  
N-CHANNEL JFET  
Linear Systems replaces discontinued Siliconix U309  
FEATURES  
The U309 is a high frequency n-channel JFET offering a  
DIRECT REPLACEMENT FOR SILICONIX U309  
OUTSTANDING HIGH FREQUENCY GAIN  
LOW HIGH FREQUENCY NOISE  
wide range and low noise performance. The  
hermetically sealed TO-18 package is well suited for  
high reliability and harsh environment applications.  
Gpg = 11.5dB  
NF = 2.7dB  
ABSOLUTE MAXIMUM RATINGS @ 25°C1  
(See Packaging Information).  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
MAXIMUM CURRENT  
Gate Current  
MAXIMUM VOLTAGES  
Gate to Drain Voltage or Gate to Source Voltage  
U309 Benefits:  
55°C to +150°C  
55°C to +135°C  
ƒ
ƒ
ƒ
High Power Low Noise gain  
Dynamic Range greater than 100dB  
Easily matched to 75input  
500mW  
10mA  
25V  
U309 Applications:  
ƒ
ƒ
ƒ
UHV / VHF Amplifiers  
Mixers  
Oscillators  
U309 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVGSS  
VGS(F)  
VGS(off)  
IDSS  
CHARACTERISTIC  
MIN  
25  
0.7  
1  
12  
‐‐  
TYP.  
‐‐  
‐‐  
‐‐  
‐‐  
MAX  
‐‐  
1
4  
30  
‐‐  
UNIT  
V
CONDITIONS  
Gate to Source Breakdown Voltage  
Gate to Source Forward Voltage  
Gate to Source Cutoff Voltage  
Drain to Source Saturation Current2  
Gate Operating Current (Note 3)  
Drain to Source On Resistance  
VDS = 0V, IG = 1µA  
VDS = 0V, IG = 10mA  
VDS = 10V, ID = 1nA  
VDS = 10V, VGS = 0V  
VDG = 9V, ID = 10mA  
VGS = 0V, ID = 1mA  
mA  
pA  
Ω
IG  
rDS(on)  
15  
35  
‐‐  
‐‐  
U309 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
gfs  
CHARACTERISTIC  
Forward Transconductance  
Output Conductance  
Input Capacitance  
MIN  
10  
‐‐  
TYP.  
14  
110  
4
MAX  
‐‐  
250  
5
UNIT  
mS  
µS  
CONDITIONS  
VDS = 10V, ID = 10mA , f = 1kHz  
gos  
Ciss  
‐‐  
pF  
VDS = 10V, VGS = 10V , f = 1MHz  
Click To Buy  
Crss  
en  
Reverse Transfer Capacitance  
Equivalent Noise Voltage  
‐‐  
6
1.9  
‐‐  
2.5  
‐‐  
nV/Hz  
VDS = 10V, ID = 10mA , f = 100Hz  
U309 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
CHARACTERISTIC  
MIN  
TYP  
MAX  
UNIT  
CONDITIONS  
NF  
Noise Figure  
f = 105MHz  
f = 450MHz  
f = 105MHz  
‐‐  
‐‐  
‐‐  
1.5  
2.7  
16  
‐‐  
‐‐  
‐‐  
dB  
dB  
Gpg  
gfg  
Power Gain3  
f = 450MHz  
f = 105MHz  
‐‐  
‐‐  
11.5  
14  
‐‐  
‐‐  
VDS = 10V, ID = 10mA  
Forward Transconductance  
f = 450MHz  
f = 105MHz  
f = 450MHz  
‐‐  
‐‐  
‐‐  
13  
‐‐  
‐‐  
‐‐  
mS  
gog  
Output Conductance  
0.16  
0.55  
Note 1 Absolute maximum ratings are limiting values above which U309 serviceability may be impaired.  
Note 2 Pulse test : PW 300µs, Duty Cycle 3%  
Note 3 Measured at optimum input noise match  
Micross Components Europe  
TO-18 (Bottom View)  
Available Packages:  
U309 in TO-18  
U309 in bare die.  
Please contact Micross for full  
package and die dimensions  
Tel: +44 1603 788967  
Email: chipcomponents@micross.com  
Web: http://www.micross.com/distribution  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or  
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.  
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx  

与U309(TO-18)相关器件

型号 品牌 获取价格 描述 数据表
U309_TO-18 MICROSS

获取价格

N-CHANNEL JFET
U309-10 CALOGIC

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
U309E VISHAY

获取价格

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
U309-TO-18-3L-ROHS Linear

获取价格

Transistor,
U30BCT VISHAY

获取价格

Dual Common-Cathode Ultrafast Plastic Rectifier
U30C05 MOSPEC

获取价格

Switchmode Dual Ultrafast Power Rectifiers
U30C10 MOSPEC

获取价格

Switchmode Dual Ultrafast Power Rectifiers
U30C15 MOSPEC

获取价格

Switchmode Dual Ultrafast Power Rectifiers
U30C20 MOSPEC

获取价格

Switchmode Dual Ultrafast Power Rectifiers
U30C20A THINKISEMI

获取价格

30 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers