U30C20A thru U30C60A
Pb
U30C20A/U30C40A/U30C60A
Pb Free Plating Product
30 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers
Unit : inch (mm)
TO-220AB/TO-220-3L
Features
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ThinkiSemi P/G technology with ultra fast recovery time
Low forward voltage drop
.139(3.55)
MIN
.054(1.39)
.045(1.15)
Case
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS,Motor Control and UPS
Car Audio Amplifiers and Sound Device Systems
.038(0.96)
.019(0.50)
.025(0.65)MAX
Mechanical Data
ꢀ
ꢀ
ꢀ
Case: Heatsink TO-220AB/TO-220-3L
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
.1(2.54)
.1(2.54)
Internal Configuration
Case
Case
Case
Case
ꢀ
ꢀ
ꢀ
Doubler
Tandem Polarity Tandem Polarity
Suffix "D" Suffix "S"
Series
Negative
Common Cathode Common Anode
Positive
Weight: 2.2 gram approximately
Suffix "C"
Suffix "A"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UNIT
SYMBOL
U30C20A
U30C40A
U30C60A
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
30.0
450
1.3
A
A
V
IF(AV)
o
(Total Device 2x15A=30A)
Current TC=125 C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage
VF
IR
0.98
1.7
(Per Diode/Per Leg)
@ 15.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
uA
uA
nS
5
50
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Trr
CJ
25-50
150
pF
oC
Operating Junction and Storage
Temperature Range
T
J, TSTG
-55 to +175
.
= 0.5A I = 1 0A Irr = 0.25A.
F R
NOTES : (1) Reverse recovery test conditions I
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.