U30D20A thru U30D60A
Pb
U30D20A thru U30D60A
Pb Free Plating Product
30.0 Ampere Dual Common Anode Ultra Fast Recovery Rectifiers
Unit: inch (mm)
TO-3P/TO-247AD
Features
.640(16.25)
.620(15.75)
.199(5.05)
.175(4.45)
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Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
.142(3.6)
.125(3.2)
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ꢀ
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Glass passivated chip junctions
Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
.095(2.4)
High temperature soldering guaranteed:
o
.126(3.2)
260 C, 0.16”(4.06mm)from case for 10 seconds
.110(2.8)
.050(1.25)
.045(1.15)
Mechanical Data
.030(0.75)
.017(0.45)
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Cases: TO-3P/TO-247AD molded plastic
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
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Polarity: As marked
Mounting position: Any
Positive
Negative
Doubler
Mounting torque: 10in-lbs. Max.
Weight: 0.2 ounce, 5.6 gram approximately
Common Cathode Common Anode Tandem Polarity
Suffix "C" Suffix "A" Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
U30D20C
U30D40C
U30D40A
U30D40D
400
U30D60C
UNIT
SYMBOL
U30D20A
U30D60A
U30D60D
600
U30D20D
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
280
400
420
600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=125oC
30.0
300
1.3
A
A
V
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage
@ 15.0 A
VF
IR
0.98
1.7
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
uA
uA
nS
10
500
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Trr
CJ
35
pF
oC
150
Operating Junction and Storage
Temperature Range
T
J, TSTG
-55 to +150
.
NOTES : (1) Reverse recovery test conditions I
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
F
= 0.5A I
R
= 1 0A Irr = 0.25A.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
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