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U30D30C PDF预览

U30D30C

更新时间: 2024-11-22 14:53:03
品牌 Logo 应用领域
WON-TOP 超快速恢复二极管局域网
页数 文件大小 规格书
4页 44K
描述
Powerpack

U30D30C 技术参数

生命周期:Active零件包装代码:TO-3P
包装说明:PLASTIC, TO-3P, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.75
其他特性:LOW LEAKAGE CURRENT应用:SUPER FAST RECOVERY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:300 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:300 V
最大反向恢复时间:0.005 µs表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

U30D30C 数据手册

 浏览型号U30D30C的Datasheet PDF文件第2页浏览型号U30D30C的Datasheet PDF文件第3页浏览型号U30D30C的Datasheet PDF文件第4页 
®
U30D05C – U30D60C  
30A GLASS PASSIVATED DUAL SUPERFAST RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
H
Superfast 35nS and 50nS Recovery Time  
Low Forward Voltage Drop  
Low Reverse Leakage Current  
TO-3P  
Dim  
A
B
C
D
E
Min  
1.85  
4.70  
Max  
2.15  
5.30  
23.00  
S
R
L
J
High Surge Current Capability  
Epoxy Meets UL 94V-0 Classification  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
K
19.00  
2.80  
0.45  
PIN1  
2
3
3.20  
0.85  
16.20  
2.70  
3.65 Ø  
4.50  
5.65  
1.40  
2.50  
12.70  
6.00  
P
G
H
J
1.70  
3.15 Ø  
Mechanical Data  
N
K
L
Case: TO-3P, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-750, Method 2026  
Polarity: See Diagram  
Weight: 5.6 grams (approx.)  
M
N
P
5.25  
1.10  
M
A
R
S
11.70  
5.00  
B
All Dimensions in mm  
Mounting Position: Any  
Mounting Torque: 1.2 N.m Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
C
PIN 1  
PIN 3  
PIN 2  
Case  
G
D
E
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
U30D U30D U30D U30D U30D U30D U30D U30D  
Characteristic  
Symbol  
Unit  
05C  
10C  
15C  
20C  
30C  
40C  
50D  
60C  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
100  
150  
200  
300  
400  
500  
600  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
70  
105  
140  
210  
280  
350  
420  
V
A
Average Rectified Output Current  
@TC = 100°C  
Total Device  
Per Diode  
30  
15  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed  
on Rated Load (JEDEC Method)  
IFSM  
300  
A
Forward Voltage per diode  
@IF = 15A  
VFM  
IRM  
0.975  
1.3  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TC = 25°C  
@TC = 100°C  
10  
500  
µA  
Reverse Recovery Time (Note 1)  
trr  
35  
50  
nS  
pF  
Typical Junction Capacitance (Note 2)  
CJ  
175  
145  
Thermal Resistance Junction to Ambient per diode  
Thermal Resistance Junction to Case per diode  
RθJA  
RθJC  
40  
1.5  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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