U20D20C thru U20D60C
Pb
U20D20C/U20D40C/U20D60C
Pb Free Plating Product
20 Ampere Common Cathode Ultra Fast Recovery Rectifier Diodes
Unit: inch (mm)
TO-3P/TO-247AD
Features
.640(16.25)
.620(15.75)
.199(5.05)
.175(4.45)
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ꢀ
Dual rectifier construction, positive center-tap
.142(3.6)
.125(3.2)
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
Glass passivated chip junctions
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ꢀ
ꢀ
ꢀ
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Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
.095(2.4)
High temperature soldering guaranteed:
o
.126(3.2)
260 C, 0.16”(4.06mm)from case for 10 seconds
.110(2.8)
.050(1.25)
.045(1.15)
Mechanical Data
.030(0.75)
.017(0.45)
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Cases: TO-3P/TO-247AD molded plastic
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
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ꢀ
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Polarity: As marked
Case
Case
Case
Case
Mounting position: Any
Mounting torque: 10in-lbs. Max.
Weight: 6.5 gram approximately
Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "S"
Reverse Doubler
Negative
Positive
Suffix "C"
Suffix "A"
Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UNIT
SYMBOL
U20D20C U20D40C U20D60C
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=125oC
20.0
A
A
V
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
200
175
Maximum Instantaneous Forward Voltage
@ 10.0 A
VF
IR
0.98
1.3
1.7
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
uA
uA
nS
5.0
100
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Trr
CJ
35
pF
oC
120
70
Operating Junction and Storage
Temperature Range
-55 to +150
T
J
, TSTG
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Page 1/2
http://www.thinkisemi.com/
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.