5秒后页面跳转
U20DCT-E3/4W PDF预览

U20DCT-E3/4W

更新时间: 2024-01-04 15:15:53
品牌 Logo 应用领域
威世 - VISHAY 整流二极管功效局域网
页数 文件大小 规格书
5页 161K
描述
Dual Common-Cathode Ultrafast Plastic Rectifier

U20DCT-E3/4W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.64
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.91 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:100 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.08 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

U20DCT-E3/4W 数据手册

 浏览型号U20DCT-E3/4W的Datasheet PDF文件第2页浏览型号U20DCT-E3/4W的Datasheet PDF文件第3页浏览型号U20DCT-E3/4W的Datasheet PDF文件第4页浏览型号U20DCT-E3/4W的Datasheet PDF文件第5页 
New Product  
U(B)20BCT thru U(B)20DCT  
Vishay General Semiconductor  
Dual Common-Cathode Ultrafast Plastic Rectifier  
FEATURES  
• Oxide planar chip junction  
TO-263AB  
TO-220AB  
• Ultrafast recovery time  
K
• Soft recovery characteristics  
• Low switching losses, high efficiency  
2
• High forward surge capability  
1
3
• Meets MSL level 1, per J-STD-020, LF maximum  
2
peak of 245 °C (for TO-263AB package)  
1
UB20xCT  
U20xCT  
PIN 1  
• Solder dip 260 °C, 40 s (for TO-220AB package)  
PIN 1  
K
PIN 2  
CASE  
PIN 2  
HEATSINK  
PIN 3  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency rectifier of  
switching power supplies, freewheeling diodes,  
dc-to-dc converters or polarity protection specifically  
for DCM application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
10 A x 2  
VRRM  
100 V, 150 V, 200 V  
MECHANICAL DATA  
Case: TO-220AB and TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
IFSM  
100 A  
26 ns  
trr  
VF at IF = 10 A  
TJ max.  
0.834 V  
150 °C  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
U(B)20BCT  
U(B)20CCT  
U(B)20DCT  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
100  
150  
200  
V
total device  
per diode  
20  
10  
Max. average forward rectified current (Fig. 1)  
IF(AV)  
A
A
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
100  
Electrostatic discharge capacitor voltage,  
human body model: C = 150 pF, R = 1.5 kΩ (contact mode)  
VC  
8
kV  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Document Number: 89017  
Revision: 13-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

U20DCT-E3/4W 替代型号

型号 品牌 替代类型 描述 数据表
VS-MUR2020CT-N3 VISHAY

功能相似

Ultrafast Rectifier, 2 x 10 A FRED Pt®
MUR2020CTPBF VISHAY

功能相似

Ultrafast Rectifier, 2 x 10 A FRED PtTM

与U20DCT-E3/4W相关器件

型号 品牌 获取价格 描述 数据表
U20DL2C48A TOSHIBA

获取价格

DIODE (CWITCHING TYPE POWER SUPPLY APPLICATION)
U20DL2C48ATE24L TOSHIBA

获取价格

DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode
U20DL2C48ATE24R TOSHIBA

获取价格

DIODE 10 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode
U20DL2C53A TOSHIBA

获取价格

TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type
U20EA1 MMD

获取价格

UM-1 Thru-Hole Crystal
U20EA3 MMD

获取价格

UM-1 Thru-Hole Crystal
U20EB1 MMD

获取价格

UM-1 Thru-Hole Crystal
U20EB3 MMD

获取价格

UM-1 Thru-Hole Crystal
U20EC1 MMD

获取价格

UM-1 Thru-Hole Crystal
U20EC3 MMD

获取价格

UM-1 Thru-Hole Crystal