Datasheet > TSML3710

TSML3710

更新时间： 2024-11-29 22:49:31

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
8页	239K
描述
GaAs/GaAlAs Infrared Emitting Diode in SMT Package

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TSML3710 数据手册

TSML3710

Vishay Semiconductors

VISHAY

GaAs/GaAlAs Infrared Emitting Diode in SMT Package

Description

TSML3710 is an infrared emitting diode in GaAlAs on

GaAs technology in miniature PLCC2 SMD package.

Features

• SMT IRED with extra high radiant power

• Low forward voltage

• Compatible with automatic placement equipment

• EIA and ICE standard package

94 8553

• Suitable for infrared, vapor phase and wavesolder

process

• Packed in 8 mm tape

• Suitable for pulse current operation

Applications

IR emitter in photointerrupters, transmissive sensors

and reflective sensors

• Extra wide angle of half intensity ϕ = 60ꢀ

• Peak wavelength λ = 950 nm

• Matched with TEMT3700 phototransistor

Household appliance

IR emitter in low space applications

Tactile keyboards

Parts Table

Part

Ordering code

TSML3710-GS08

Remarks

TSML3710

MOQ 7500pcs (1500 pcs per reel)

Absolute Maximum Ratings

T_amb= 25 ꢀC, unless otherwise specified

Parameter

Test condition

Symbol

V_R

Value

Unit

Reverse Voltage

Forward Current

I_F

I_FM

I_FSM

P_V

100

200

Peak Forward Current

t_p/T = 0.5, t_p= 100 µs

t_p= 100 µs

Surge Forward Current

Power Dissipation

170

ꢀC

Junction Temperature

T_j

100

Operating Temperature Range

Storage Temperature Range

Soldering Temperature

Thermal Resistance Junction/Ambient

T_amb

T_stg

T_sd

- 40 to + 85

- 40 to +100

260

ꢀC

t ≤10sec

ꢀC

R_thJA

450

K/W

Document Number 81075

Rev. 3, 06-Jun-03

www.vishay.com

12 3 4 5 6 7 8

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