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TSMS3700-GS18 PDF预览

TSMS3700-GS18

更新时间: 2024-11-05 15:55:11
品牌 Logo 应用领域
威世 - VISHAY 半导体
页数 文件大小 规格书
6页 149K
描述
Infrared LED, 950nm

TSMS3700-GS18 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.84
最大正向电流:0.1 A最大正向电压:1.7 V
JESD-609代码:e3安装特点:SURFACE MOUNT
最高工作温度:100 °C最低工作温度:-55 °C
峰值波长:950 nm最大反向电压:5 V
半导体材料:GaAs光谱带宽:5e-8 m
子类别:Infrared LEDs表面贴装:YES
端子面层:Tin (Sn)视角:120 deg
Base Number Matches:1

TSMS3700-GS18 数据手册

 浏览型号TSMS3700-GS18的Datasheet PDF文件第2页浏览型号TSMS3700-GS18的Datasheet PDF文件第3页浏览型号TSMS3700-GS18的Datasheet PDF文件第4页浏览型号TSMS3700-GS18的Datasheet PDF文件第5页浏览型号TSMS3700-GS18的Datasheet PDF文件第6页 
TSMS3700  
Vishay Semiconductors  
VISHAY  
GaAs Infrared Emitting Diode in SMT Package  
Description  
TSMS3700 is a standard GaAs infrared emitting  
diode in a miniature PLCC-2 package.  
Its flat window provides a wide aperture, making it  
ideal for use with external optics.  
The diode is case compatible to the TEMT3700 pho-  
totransistor, allowing the user to assemble his own  
optical interrupters.  
Features  
• SMT IRED with high radiant power  
• Low forward voltage  
Applications  
Infrared source in tactile keyboards  
IR diode in low space applications  
• Compatible with automatic placement equipment  
• EIA and ICE standard package  
• Suitable for infrared, vapor phase and wavesolder  
process  
Matching with phototransistor TEMT3700 in reflective  
sensors  
• Available in 8 mm tape  
PCB mounted infrared sensors  
• Suitable for DC and high pulse current operation  
• Wide angle of half intensity ϕ = ꢀ0°  
• Peak wavelength λp = 950 nm  
• High reliability  
Infrared emitter for miniature light barriers  
• Matching to TEMT3700 phototransistor  
• Lead-free device  
Parts Table  
Part  
Ordering code  
Remarks  
TSMS3700  
TSMS3700-GS08  
TSMS3700-GS18  
MOQ: 7500 pcs  
MOQ: 8000 pcs  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
Symbol  
Value  
5
Unit  
V
Reverse Voltage  
V
R
Forward current  
I
100  
200  
mA  
mA  
A
F
Peak Forward Current  
Surge Forward Current  
Power Dissipation  
t /T = 0.5, t = 100 µs  
I
FM  
p
p
t = 100 µs  
I
1.5  
p
FSM  
P
170  
mW  
°C  
V
Junction Temperature  
Operating Temperature Range  
T
100  
j
T
- 55 to + 100  
°C  
amb  
Document Number 81037  
Rev. 1.7, 22-Jun-04  
www.vishay.com  
1

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