Datasheet > TSM4410DCS

TSM4410DCS

更新时间： 2024-11-11 03:57:39

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
6页	359K
描述
25V Dual N-Channel MOSFET

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中文翻译

获取价格

数据手册

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TSM4410DCS 数据手册

TSM4410D

25V Dual N-Channel MOSFET

PRODUCT SUMMARY

SOP-8

Pin Definition:

1. Source 1

2. Gate 1

3. Source 2

4. Gate 2

V_DS(V)

R_DS(on)(mΩ)

15 @ V_GS= 10V

21 @ V_GS= 4.5V

I_D(A)

5, 6, 7, 8. Drain

Features

Block Diagram

●

Advance Trench Process Technology

High Density Cell Design for Ultra Low On-resistance

Application

●

Load Switch

Dc-DC Converters and Motors Drivers

Ordering Information

Part No.

Package

SOP-8

Packing

TSM4410DCS RL

2.5Kpcs / 13” Reel

Dual N-Channel MOSFET

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

V_DS

V_GS

I_D

Gate-Source Voltage

±20

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a,b

I_DM

I_S

2.3

Ta = 25^oC

Ta = 70^oC

Maximum Power Dissipation

P_D

1.3

Operating Junction Temperature

T_J

+150

-55 to +150

^oC

Operating Junction and Storage Temperature Range

T_J, T_STG

Thermal Performance

Parameter

Symbol

RӨ_JC

Limit

Unit

^oC/W

Junction to Case Thermal Resistance

Junction to Ambient Thermal Resistance (PCB mounted)

RӨ_JA

Notes:

a. Maximum DC current limited by the package

b. Surface Mounted on 1” x 1” FR4 Board, t ≤ 10 sec.

1/6

Version: A07

12 3 4 5 6

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