TSM015NA03CR
Taiwan Semiconductor
N-Channel Power MOSFET
30V, 205A, 1.5mΩ
FEATURES
KEY PERFORMANCE PARAMETERS
● Low RDS(ON) to minimize conductive losses
PARAMETER
VALUE
UNIT
● Low gate charge for fast power switching
VDS
30
V
● 100% UIS and Rg tested
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
VGS = 10V
VGS = 4.5V
1.5
RDS(on) (max)
Qg
mΩ
2.0
● Halogen-free according to IEC 61249-2-21
33
nC
APPLICATIONS
● DC-DC Converters
● Battery Power Management
● ORing FET/Load Switching
PDFN56
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VDS
LIMIT
UNIT
Drain-Source Voltage
30
±20
205
32
V
Gate-Source Voltage
VGS
V
TC = 25°C
TA = 25°C
Continuous Drain Current (Note 1)
Pulsed Drain Current
ID
A
A
IDM
820
Single Pulse Avalanche Current (Note 2)
Single Pulse Avalanche Energy (Note 2)
IAS
46
A
EAS
317
mJ
TC = 25°C
TC = 125°C
TA = 25°C
TA = 125°C
104
21
Total Power Dissipation
Total Power Dissipation
PD
W
2.6
PD
W
0.5
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
RӨJC
LIMIT
1.2
UNIT
°C/W
°C/W
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
RӨJA
48
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.
1
Version: A1612