TSM020N04LCR
Taiwan Semiconductor
N-Channel Power MOSFET
40V, 170A, 2.0mΩ
FEATURES
KEY PERFORMANCE PARAMETERS
● Low RDS(ON) to minimize conductive losses
● Logic level
PARAMETER
VALUE
UNIT
VDS
40
V
● Low gate charge for fast power switching
VGS = 10V
VGS = 4.5V
2.0
RDS(on)
(max)
● 100% UIS and Rg tested
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
mΩ
2.6
Qg
76
nC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
●
●
●
●
BLDC Motor Control
Battery Power Management
DC-DC converter
Secondary Synchronous Rectification
PDFN56
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VDS
LIMIT
UNIT
Drain-Source Voltage
40
V
Gate-Source Voltage
VGS
±20
V
TC = 25°C
TA = 25°C
170
27
Continuous Drain Current (Note 1)
Pulsed Drain Current
Single Pulse Avalanche Current (Note 2)
Single Pulse Avalanche Energy (Note 2)
ID
A
IDM
IAS
680
43
A
A
EAS
277
mJ
TC = 25°C
TC = 125°C
TA = 25°C
TA = 125°C
104
21
Total Power Dissipation
Total Power Dissipation
PD
W
2.6
PD
W
0.5
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
RӨJC
LIMIT
1.2
UNIT
°C/W
°C/W
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
RӨJA
48
Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is
determined by the user’s board design.
1
Version: A1608