Datasheet > TSM033NB04CR

TSM033NB04CR

更新时间： 2024-10-01 01:17:27

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
7页	394K
描述
N-Channel Power MOSFET

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数据手册

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TSM033NB04CR 数据手册

TSM033NB04CR

Taiwan Semiconductor

N-Channel Power MOSFET

40V, 121A, 3.3mΩ

FEATURES

KEY PERFORMANCE PARAMETERS

● Low R_DS(ON)to minimize conductive losses

● Low gate charge for fast power switching

● 100% UIS and R_gtested.

PARAMETER

VALUE

UNIT

V_DS

R_DS(on)(max)

Q_g

V_GS= 10V

3.3

mΩ

● 175°C Operating Junction Temperature

● Compliant to RoHS directive 2011/65/EU and in

accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● BLDC Motor Control

● Battery Power Management

● DC-DC converter

● Secondary Synchronous Rectification

PDFN56

Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

PARAMETER

SYMBOL

V_DS

LIMIT

UNIT

Drain-Source Voltage

±20

121

Gate-Source Voltage

V_GS

T_C= 25°C

T_A= 25°C

Continuous Drain Current ^{(Note 1)}

Pulsed Drain Current

Single Pulse Avalanche Current ^{(Note 2)}

Single Pulse Avalanche Energy^{(Note 2)}

I_D

I_DM

I_AS

484

E_AS

194

T_C= 25°C

T_C= 125°C

T_A= 25°C

T_A= 125°C

107

Total Power Dissipation

P_D

3.1

P_D

Operating Junction and Storage Temperature Range

T_J, T_STG

- 55 to +175

°C

THERMAL PERFORMANCE

PARAMETER

SYMBOL

R_ӨJC

LIMIT

1.4

UNIT

°C/W

Junction to Case Thermal Resistance

Junction to Ambient Thermal Resistance

R_ӨJA

Thermal Performance Note: R_ӨJAis the sum of the junction-to-case and case-to-ambient thermal resistances. The case-

thermal reference is defined at the solder mounting surface of the drain pins. R_ӨJAis guaranteed by design while R_ӨCAis

determined by the user’s board design. The R_ӨJAlimit presented here is based on mounting on a 1 in²pad of 2 oz copper.

Version: A1712

12 3 4 5 6 7

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