Datasheet > TSM036N03PQ56

TSM036N03PQ56

更新时间： 2024-10-01 01:15:51

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
5页	536K
描述
30V N-Channel MOSFET

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中文翻译

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数据手册

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TSM036N03PQ56 数据手册

TSM036N03PQ56

30V N-Channel MOSFET

PDFN56

Key Parameter Performance

Parameter Value

V_DS

Pin Definition:

1. Source

2. Source

3. Source

4. Gate

8. Drain

Unit

7. Drain

6. Drain

5. Drain

3.6

5.5

V_GS= 10V

V_GS= 4.5V

R_DS(on)(max)

Q_g

mΩ

Ordering Information

Block Diagram

Part No.

Package

Packing

2.5kpcs / 13” Reel

TSM036N03PQ56 RLG

PDFN56

Note: “G” denotes for Halogen- and Antimony-free as those which contain

<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm

antimony compounds

N-Channel MOSFET

Absolute Maximum Ratings (Tc = 25℃ unless otherwise noted)

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C= 25℃

Continuous Drain Current

I_D

T_C= 100℃

Drain Current-Pulsed ^{(Note 1)}

Single Pulse Avalanche Energy ^{(Note 2)}

I_DM

E_AS

I_AS

380

125

Single Pulse Avalanche Current

Maximum Power Dissipation @ T_C= 25℃

Storage Temperature Range

P_D

115

T_STG

T_J

-55 to +175

℃

Operating Junction Temperature Range

Thermal Performance

Parameter

Symbol

R_ӨJC

Limit

1.3

Unit

℃/W

Thermal Resistance - Junction to Case

Thermal Resistance - Junction to Ambient

R_ӨJA

1/5

Version: A14

12 3 4 5

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